Journal of the Korean Physical Society

Korean Physical Society (한국물리학회)
권호 표지

Electrical Properties of the ZnO Nanowire Transistor and its Analysis with Equivalent Circuit Model

Yim, C.Y.;Woo, Y.S.;Kim, G.T.;Jeon, D.Y.;Lee, J.S.;Kim, K.H.;Kim, S.;Roth, Siegmar

  • Published : 20060000
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Abstract

A single ZnO nanowire .eld-e��ect transistor(FET) was fabricated and its current-voltage char- acteristics were recorded at the temperatures ranging from T = 107 K to 300 K. Current-voltage characteristics showed typical non-ohmic behaviors with noticeable temperature dependence of the carrier concentration and the mobilities, re°ecting the in°uence of the contact barriers formed be- tween the ZnO nanowire and metal electrodes. In this paper, an equivalent circuit model of the ZnO nanowire FET and its analysis methods with PSPICE simulation are suggested in order to model the contact barriers in nanowire devices.

Keywords

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