Journal of the Institute of Electronics Engineers of Korea TC (대한전자공학회논문지TC)

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Giga WDM-PON based on ASE Injection R-SOA

ASE 주입형 R-SOA 기반 기가급 WDM-PON 연구

  • Shin Hong-Seok (Next Generation Technology Team, Telecommunication R&D center, Samsung Electronics Co.) ;
  • Hyun Yoo-Jeong (Next Generation Technology Team, Telecommunication R&D center, Samsung Electronics Co.) ;
  • Lee Kyung-Woo (Next Generation Technology Team, Telecommunication R&D center, Samsung Electronics Co.) ;
  • Park Sung-Bum (Next Generation Technology Team, Telecommunication R&D center, Samsung Electronics Co.) ;
  • Shin Dong-Jae (Next Generation Technology Team, Telecommunication R&D center, Samsung Electronics Co.) ;
  • Jung Dae-Kwang (Next Generation Technology Team, Telecommunication R&D center, Samsung Electronics Co.) ;
  • Kim Seung-Woo (Next Generation Technology Team, Telecommunication R&D center, Samsung Electronics Co.) ;
  • Yun In-Kuk (Next Generation Technology Team, Telecommunication R&D center, Samsung Electronics Co.) ;
  • Lee Jeong-Seok (Next Generation Technology Team, Telecommunication R&D center, Samsung Electronics Co.) ;
  • Oh Yun-Je (Next Generation Technology Team, Telecommunication R&D center, Samsung Electronics Co.) ;
  • Park Jin-Woo (Department of Electronics Engineering, Korea University)
  • 신홍석 (삼성전자 통신연구소 차세대기술팀) ;
  • 현유정 (삼성전자 통신연구소 차세대기술팀) ;
  • 이경우 (삼성전자 통신연구소 차세대기술팀) ;
  • 박성범 (삼성전자 통신연구소 차세대기술팀) ;
  • 신동재 (삼성전자 통신연구소 차세대기술팀) ;
  • 정대광 (삼성전자 통신연구소 차세대기술팀) ;
  • 김승우 (삼성전자 통신연구소 차세대기술팀) ;
  • 윤인국 (삼성전자 통신연구소 차세대기술팀) ;
  • 이정석 (삼성전자 통신연구소 차세대기술팀) ;
  • 오윤제 (삼성전자 통신연구소 차세대기술팀) ;
  • 박진우 (고려대학교 전자공학과)
  • Published : 2006.05.01
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Abstract

Reflective semiconductor optical amplifiers(R-SOAs) were designed with high gain, wide optical bandwidth, high thermal reliability and wide modulation bandwidth in TO-can package for the transmitter of wavelength division multiplexed-passive optical network(WDM-PON) application. Double trench structure and current block layer were introduced in designing the active layer of R-SOA to enable high speed modulation. The injection power requirement and the viable temperature range of WDM-PON system are experimentally analysed in based on Amplified Spontaneous Emission(ASE)-injected R-SOAs. The effect of the different injection spectrum in the gain-saturated R-SOA was experimentally characterized based on the measurements of excessive intensity noise, Q factor, and BER. The proposed spectral pre-composition method reduces the bandwidth of injection source below the AWG bandwidth and thereby avoids spectrum distortion impeding the intensity noise reduction originated from the amplitude squeezing.

낮은 구동 전류에서 이득 포화 현상을 일으키며 높은 변조 속도를 지원하기 위해 충분한 전광 응답 속도가 제공되는 반사형 반도체 광 증폭기(R-SOA)를 TO-can package 형태로 개발하고 기가급 파장분할다중방식 수동형 광가입자망(WDM-PON)에서 적용 가능성을 시험해 보았다. R-SOA의 제작에 Double trench 구조와 개선된 전류 차단층이 도입되어 고속 변조가 가능해졌다. 자기 방출광(ASE) 주입 방식 R-SOA를 기반으로 하는 기가급 WDM-PON에서 전송 가능하기 위해 필요한 주입 광세기 요구 조건과 사용 가능한 온도 범위를 측정하였다. 주입광의 스펙트럼에 따른 R-SOA의 전송 성능의 변화를 초과이득잡음, Q, 에러오율 측정을 통해 분석하였다. 제안된 파형이 기 조성된 ASE 공급 방법을 사용하여 출력 스펙트럼 감소에 의한 전송 신호의 품질 저하를 보완할 수 있음을 확인하였다.

Keywords

References

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