Journal of the Institute of Electronics Engineers of Korea SD (대한전자공학회논문지SD)

The Institute of Electronics and Information Engineers (대한전자공학회)
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The various bonding structure of SiOC thin films attributed to the carbon density

탄소밀도의 변화가 SiOC 박막의 결합구조에 미치는 영향

  • Oh Teresa (School of Electronic and Information Engineering, Cheongju University)
  • Published : 2006.05.01
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Abstract

This paper reports the correlation between dielectric constant and degree of amorphism of the hybrid type SiOC thin films. SiOC thin films were deposited by high density plasma chemical vapor deposition using bistrimethyl- silylmethane(BTMSM,$H_{9}C_{3}-Si-CH_{2}-Si-C_{3}H_{9}$) and oxygen precursors with various flow rate ratio. As-deposited film and annealed films at $400^{\circ}C$ were analyzed by XRD. The SiOC thin films were amorphous from XRD patterns. For quantitative analysis, the diffraction pattern of the samples was transformed to radial distribution function by Fourier analysis, and then compared with each other. The degree of amorphism of annealed films was higher than that of as-deposited ones. The dielectric constant varied in accordance with flow rate ratio of precursors. The lowest dielectric constant was obtained from the as-deposited film which has the highest degree of amorphism after annealing.

본 연구는 SiOC 박막의 비정질 정도와 유전상수와의 상관성에 관하여 정리하고 있다. 고밀도 플라즈마 CVD 방법에 의해 증착된 SiOC 박막은 bistrimethyl- silylmethane와 산소가 혼합된 개스 소스의 유량비를 다르게 하였다. 증착된 박막과 $400^{\circ}C$ 열처리된 박막은 XRD분석방법을 적용하여 비정질도를 유추하였다. 적량분석을 위해서 각 시료들의 회절패턴을 푸리에 해석에 의해 동경분포함수로 변환하고 비교하였다. 열처리한 박막의 비정질도는 증착한 박막에 비하여 결정도가 높았다. 유량비에 따라서 유전상수가 변하였으며, 유전상수는 열처리 후 비정질도가 가장 큰 박막에서 가장 낮게 나타났다.

Keywords

References

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