Journal of Sensor Science and Technology (센서학회지)

The Korean Sensors Society (한국센서학회)
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Optimum deposition conditions of AlN thin film on the Si substrate for SAW application

SAW 소자 응용을 위한 실리콘 기판 위에 AlN 박막의 최적 증착 조건에 관한 연구

  • 고봉철 (현대자동차) ;
  • 남창우 (울산대학교 전기전자정보시스템공학부)
  • Published : 2007.07.31
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Abstract

AlN thin film for SAW filter application was deposited on (100) silicon wafers by reactive magnetron sputtering method. The structural characteristics were dependent on the deposition conditions such as sputtering pressure, RF power, substrate temperature, and nitrogen partial pressure. Scanning Electron Microscope (SEM), X-ray Diffraction (XRD), Electron Probe MicroAnalyzer (EPMA) and Atomic Force Microscope (AFM) have been used to find out structural properties and preferred orientation of AlN thin films. Insertion loss of SAW devices was 28.51 dB and out of band rejection was about 24 dB.

Keywords

References

  1. H. Okano, N. Tanaka, K. Shibata, and S. Nakano, 'Preparation of aluminwn nitride thin films by reactive sputtering and their applications to GHz-band surface acoustic wave devices', Appl. Phys. Lett., vol. 64, no. 2, pp. 166-168, 1994 https://doi.org/10.1063/1.111553
  2. 서주원, 이원종, '반응성 RF 마그네트론 스퍼터링법 으로 증착한 AIN박막의 우선배향성 및 표변 탄성파 특성에 관한 연구', 한국재료학회지, 제7권, 제6호, pp. 510-516, 1997
  3. A. Pohl, 'Wirelessly interrogable surface transcations on instrumentation and application' IEEE acoustic wave sensors for vehicular measurement', vol. 46, no. 4
  4. 김광택, 이규효, 'TPMS 적용을 위한 가변 정전 용량형 압력센서 개발', 센서학회지, 제14권, 제4호, pp. 286-290, 2005
  5. 권성열, '고주파 마그네트론 스퍼터링 방법으로 제작한 ITO 박막의 표면형태 및 전기적 특성', 센서학회지, 제15권, 제1호, pp. 71-75, 2006 https://doi.org/10.5369/JSST.2006.15.1.071
  6. 박상현, 강주현, 유광수, 'RF Magnetron Sputtering 법을 이용한 SnO 박막 센서의 제조 및 알콜 감도 특성', 제14권, 제2호, pp. 63-68, 2005
  7. J. A. Thornton, in Thin 1997, pp.1031-1037. Film Processes, eds. J. L. Vossen and W. Kern, Academic Press, New York, 1978
  8. C. C. Cheng, Y. C. Chen, H. J. Wang, and W. R. Chen, 'Morphology and structure of aluminum nitride thin films on glass substrate', Jpn. J Appl. Phys., vol.35, pt. 1, no. 3, pp. 1880-1885, 1996 https://doi.org/10.1143/JJAP.35.1880
  9. X. H. Xu, H. S. Wu, C. J. Zhang, and Z. H. Jin, 'Morphological properties of AlN piezoelectric thin films deposited by DC reactive magnetron sputtering', Thin Solid films 388, pp. 62-67, 2001 https://doi.org/10.1016/S0040-6090(00)01914-3
  10. O. J. Gregory, A. B. Slot, P. S. Amons, and E. E. crisman, 'High temperature strain gages based on reactively sputtered AlN, thin films', Surface and Coatings Technology 88, pp. 79-89, 1996
  11. S. Uchiyama, Y. Ishigami, M. Ohta, M. Niigaki, H. Kan, Y. Nakanishi, and T. Yamaguchi, 'Growth of AIN films by magnetron sputtering', Journal of Crystal Growth 189/190, pp. 448-451, 1998 https://doi.org/10.1016/S0022-0248(98)00328-5
  12. W. Y. Chiu, C. H. Wu, H. L. Kao, and S. Jeng, 'The optical properties and applications of AIN thin films prepared by a helicon sputtering system', J Vac. Sci. Technol. A, vol. 20, no. 3, pp. 843-847, 2002 https://doi.org/10.1116/1.1470512
  13. H. M. Liaw, W. Cronin, and F. S. Hickernell, 'The SAW characteristics of sputtered aluminum nitride on silicon', IEEE Ultrasonics symposium, pp. 267271, 1993

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