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Room temperature operating nitrogen dioxide sensor based tellurium thin films

Te를 이용한 상온 동작형 NO2 센서 제작 및 감응 특성

  • Shin, Han-Jae (School of Electrical Engineering and Computer Science, Kyungpook National University) ;
  • Song, Kap-Duk (Advanced Display Manufacturing Research Cemter, Kyungpook National University) ;
  • Joo, Byung-Su (School of Electrical Engineering and Computer Science, Kyungpook National University) ;
  • Sohn, Myoung-Ho (Department of Sensor and Display Engineering, Kyungpook National University) ;
  • Lee, Duk-Dong (School of Electrical Engineering and Computer Science, Kyungpook National University)
  • 신한재 (경북대학교 전자전기컴퓨터학부) ;
  • 송갑득 (경북대학교 첨단디스플레이제조공정 및 장비연구센터) ;
  • 주병수 (경북대학교 전자전기컴퓨터학부) ;
  • 손명호 (경북대학교 센서 및 디스플레이공학과) ;
  • 이덕동 (경북대학교 전자전기컴퓨터학부)
  • Published : 2007.03.31

Abstract

The characteristic of tellurium thin films was studied for detecting nitrogen dioxide gas at room temperature. The film was deposited on $Al_{2}O_{3}$ substrate by using thermal evaporator. The subsequent process was heat treatment by several conditions. (temperature, flowed gases) Surface and grain boundary was investigated using SEM. The results showed that resistance of the tellurium film decreases reversibly in the presence of nitrogen dioxide. The sensitivity of this device depends on the gas concentration and detect lower concentrations less than 10 ppm.

Keywords

References

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