Journal of the Korean Institute of Electrical and Electronic Material Engineers (한국전기전자재료학회논문지)

The Korean Institute of Electrical and Electronic Material Engineers (한국전기전자재료학회)
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Growth of Polycrystalline 3C-SiC Thin Films using HMDS Single Precursor

HMDS 단일 전구체를 이용한 다결정 3C-SiC 박막 성장

  • 정귀상 (울산대학교 전기전자정보시스템공학부) ;
  • 김강산 (울산대학교 전기전자정보시스템공학부) ;
  • 한기봉 (울산대학교 전기전자정보시스템공학부)
  • Published : 2007.02.01
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Abstract

This paper describes the characteristics of polycrystalline ${\beta}$ or 3C (cubic)-SiC (silicon carbide) thin films heteroepitaxailly grown on Si wafers with thermal oxide. In this work, the poly 3C-SiC film was deposited by APCVD (atmospheric pressure chemical vapor deposition) method using HMDS (hexamethyildisilane: $Si_{2}(CH_{3}_{6})$ single precursor. The deposition was performed under various conditions to determine the optimized growth conditions. The crystallinity of the 3C-SiC thin film was analyzed by XPS (X-ray photoelectron spectroscopy), XRD (X-ray diffraction) and FT-IR (fourier transform-infrared spectometers), respectively. The surface morphology was also observed by AFM (atomic force microscopy) and voids or dislocations between SiC and $SiO_{2}$ were measured by SEM (scanning electron microscope). Finally, depth profiling was invesigated by GDS (glow discharge spectrometer) for component ratios analysis of Si and C according to the grown 3C-SiC film thickness. From these results, the grown poly 3C-SiC thin film is very good crystalline quality, surface like mirror and low defect. Therfore, the poly 3C-SiC thin film is suitable for extreme environment, Bio and RF MEMS applications in conjunction with Si micromaching.

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References

  1. M. R. Werner and W. R. Fahrner, 'Review on materials, microsensors, system, and devices for high-temperature and harshenvironment applications', IEEE Trans. on Indus. Electro., Vol. 48, p. 249, 2001 https://doi.org/10.1109/41.915402
  2. N. Barbour and G. Schmidt, 'Inertial sensor technology trends', IEEE Sensors J., Vol. 4, p. 332, 2001
  3. L. A. Liew, R. A. Saravanan, V. M. Bright, M. L. Dunn, J. W. Daily, and R. Rajhrner, 'Processing and characterization of silicon carbon-nitride ceramics: application of electrical properties towards MEMS thermal actuators, Sensors & Actuators A, Vol. 103, p. 171, 2003 https://doi.org/10.1016/S0924-4247(02)00330-8
  4. P. M. Sarro, 'Silicon carbide as a new MEMS technology', Sensors & Actuators A, Vol. 82, p. 210, 2000 https://doi.org/10.1016/S0924-4247(99)00335-0
  5. G. Kotzar, M. Freas, P. Abel, A. Fleischman, S. Roy, C. Zorman, J. M. Moran, and J. Melzak, 'Evaluation of MEMS materials of constmction for implantable medical devices', Biomaterials, Vol. 23, p. 2727, 2002
  6. D. Gao, B. J. Wijesundara, C. Carraro, R. T. Howe, and R. Mabudian, 'Recent progress toward manufacturable polycrystalline SiC surface micromachining technology', IEEE Sensors J, Vol. 4, p. 441, 2004 https://doi.org/10.1109/JSEN.2004.828859
  7. D. Gao, B. J. Wijesundara, C. Carraro, R. T. Howe, and R. Mabudian, 'Characterization of residual strain of residual strain in SiC films deposotion using 1, 3-disliliabutane for MEMS application', J. Microlith., Microfab., Microsys., Vol. 2, p. 259, 2003 https://doi.org/10.1117/1.1610478
  8. Y. T. Yang, K. L. Ekinci, X. M. H. Huang, L. M. Schiavone, and M. L. Roukes, 'Monocrystalline silicon carbide nanoelectromechanical systems', Appl. Phys. Lett., Vol. 78, p. 162, 2001 https://doi.org/10.1063/1.1338959
  9. C. R. Stoldt, C. Carraro, W. R. Ashurst, D. Gao, R. T. Howe, and R. Maboudian, 'A low-temperature CVD process for silicon carbide MEMS', Sensors & Actuators A, Vol. 97, p. 410, 2002 https://doi.org/10.1016/S0924-4247(01)00810-X
  10. M. B. J. Wijesundara, G. Valente, W. R. Ashurst, R. T. Howe, A. P. Pisano, C. Carraro, and R. Maboudian, 'Single-source chemical vapor deposition of 3C-SiC films in a LPCVD reactor I. growth stmcture, and chemical characterization', J. Electrochem. Soc., Vol. 151, p. C210, 2004 https://doi.org/10.1149/1.1646141
  11. U. Mandracci, M. Meotto, and G. Bamcca, 'Polycrystalline SiC growth and characterization', Appl. Surf. Sci., Vol. 238, p. 331, 2004 https://doi.org/10.1016/j.apsusc.2004.05.225
  12. R. J. Jwanowski, K. Fronc, M. Heinone, and Paszkowics, 'XPS and XRD study of crystalline 3C-SiC grown by sublimation', J. Alloys & Compounds, Vol. 286, p. 143, 1999 https://doi.org/10.1016/S0925-8388(98)00994-3
  13. S. R. Kodigala, I. Bhat, T. P. Chow, J. K. Kim, and E. F. Schubert, 'Surface studies of SiC epitaxial layers grown by chemical vapor depositions', Materials Sci & Eng. B, Vol. 129, p. 22, 2006 https://doi.org/10.1016/j.mseb.2005.12.010
  14. G. Brauer, A. Anwand, F. Eichhorn, W. Skorupa, C. Hofer, C. Teichert, J. Kuriplach, J. Cizek, I. Prochazka, P. G. Coleman, T. Nozawa, and A. Kohyama, 'Characterization of a SiC/SiC composite by x-ray diffraction, atomic force microscopy and positron spectroscopies', Appl. Surf. Sci., Vol. 252, No.8, p. 3342, 2006 https://doi.org/10.1016/j.apsusc.2005.08.096