Abstract
Organic light-emitting diodes (OLEDs) are attractive because of possible application in display with low-operating voltage, low-power consumption, self-emission, and a capability for multicolor emission by selection of emissive materials. In a device structure of ITO/polytetrafluorethylene (PTFE)/N,N'-diphenyl-N,N'-bis(3-methyphenyl)-1,1'-biphenyl-4,4'-diamine(TPD)/tris(8-hydroxyquinoline)aluminum(Alq$_3$)/Al, the effect of the PTFE layer was investigated, which is one of the important factors affecting the electrical characteristics of organic light-emitting diodes. We measured the current-voltage characteristics and the luminance of the device for various thicknesses of the PTFE layer in an ITO/PTFE/TPD/Alq$_3$/Al device structure. Compared with the device without PTFE, we found the optimal thickness of PTFE to be 2.0 nm from the device we studied. By using PTFE as a hole injection layer, we improved the luminance of the device by about 400 \%.