Journal of the Korean Physical Society

Korean Physical Society (한국물리학회)
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Nitrogen Concentration Dependence of W-B-C-N Thin Films

Kim, Soo-In;Lee, Chang-Woo

  • Published : 20070200
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Abstract

The thermally stable diffusion barrier of tungsten-carbon-nitride (W-C-N) thin films has studied to investigate the impurity behaviors of carbon and nitrogen. In this research, we newly deposited tungsten-boron-carbon-nitride (W-B-C-N) thin films on silicon substrates. The 1000-\AA-thick W-B-C-N thin films provided a stuffing effect for preventing inter-diffusion between the thin metal films and the silicon during the high-temperature (700 $\sim$ 1000 $^\circ$C) annealing process. In order to improve the characteristics of the diffusion barrier, we examined the impurity behaviors for various nitrogen concentration.

Keywords

References

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