Journal of the Korean Physical Society

Korean Physical Society (한국물리학회)
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Defect Analysis in $Gd_2O_2S:Tb$ by Using X-ray Radiation with Positron Annihilation Methods

Lee, C.Y.;Kwon, J.H.;Kim, H.H.;Jeong, J.M.

  • Published : 20070900
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Abstract

Doppler broadening positron annihilation spectroscopy (DBPAS) was used to characterize atomic-sized defect structures in materials. The screen samples were exposed to X-rays at increasing levels from 3, 6, 9 to 12 Gy at 6 and 15 MV. The S parameter values increased in correlation with increased exposure time and energy, which indicated that more defects had been generated. The S parameters of the samples from hospital use varied from 0.5099 to 0.5109. The purpose of coincidence Doppler broadening (CDB) positron annihilation spectroscopy is to analyze defect structures. We found a positive relationship between the S parameter values and the exposure to X-ray irradiation. The S-parameter values of the Gd$_2$O$_2$S:Tb samples, using CDB, varied between 0.5581 and 0.5588.

Keywords

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