Current Applied Physics

Korean Physical Society (한국물리학회)
권호 표지

Improved yield in molecular electronic devices using amino-style molecules

Koo, Ja-Ryong;Pyo, Sang-Woo;Kim, Jun-Ho;Gong, Doo-Won;Kim, So-Young;Seo, Ji-Hoon;Kim, Young-Kwan

  • Published : 20070500
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Abstract

Molecular electronic devices were fabricated with amino-style derivatives as redox-active components. These molecules are amphi-philic to allow monolayer formation by the LangmuirBlodgett (LB) method, and this LB monolayer is inserted between two metal elec-trodes. On measuring the currentvoltage (IV) characteristics, it was found that the Al/amino style LB monolayer/Al devices showremarkable hysteresis and switching behavior, so that they can be used as memory devices at ambient conditions, when an aluminumoxide layer exists on the bottom electrode. From the results ofIV measurements, we acquired values of the switching voltage and somearea of the device and by inserting a Ti protecting layer between the top metal electrode and the amino style LB monolayer.

Keywords

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