Journal of the Korean Physical Society

Korean Physical Society (한국물리학회)
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Growth of InAs Quantum Dots with a Strain-Reducing Layer for 1.45 $\mu$m Emission by Migration-Enhanced Epitaxy

  • Nah, Jong-Bum (Department of Physics, Hanyang University) ;
  • Kim, Eun-Kyu (Department of Physics, Hanyang University)
  • Published : 20071000
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Abstract

InAs self-assembled quantum-dot (QD) structures with In$_{0.3}$Ga$_{0.7}$As strain-reducing layers were successfully grown on GaAs substrates by migration-enhanced epitaxy. At room temperature, the photoluminescence (PL) peak wavelength of QDs appeared at $\sim$1.3 ${\mu}$m, which is applicable for fiber-optic communications. After introducing two additional periods of InAs/InGaAs supperlattice layers on the dots, the PL peak showed a further redshift, as well as a sharper full-width at half maximum (FWHM). Emission at a peak wavelength of 1.45 $\mu$m with a FWHM of 30 meV was achieved for InAs QDs on GaAs.

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References

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