Journal of the Korean Institute of Electrical and Electronic Material Engineers (한국전기전자재료학회논문지)

The Korean Institute of Electrical and Electronic Material Engineers (한국전기전자재료학회)
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Effect of Potential Well Structure on Ion Current in SCBF Device

SCBF 장치에서 이온전류에 대한 포텐셜 우물 구조의 영향

  • 주흥진 (한양대학교 전기공학과) ;
  • 박정호 (한양대학교 전기공학과) ;
  • 고광철 (한양대학교 전기제어생체공학부)
  • Published : 2007.05.01
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Abstract

SCBF(Spherically Convergent Beam Fusion) device has been studied as a neutron source. Neutron production rate is a most important factor for the application of SCBF device and is proportional to the square of the ion current[1]. It is regarded generally that some correlations between the potential well structure and the ion current exist. In this paper, the ion current and potential distribution were calculated in a variety of grid cathode geometries using FEM-FCT method. Single potential well structure was certified inside the grid cathode. The deeper the potential well became, the higher the ion current due to the high electric field near the grid cathode became.

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References

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