Journal of the Korean institute of surface engineering (한국표면공학회지)

The Korean Institute of Surface Engineering (한국표면공학회)
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Characterization of AI-doped ZnO Films Deposited by DC Magnetron Sputtering

DC 마그네트론 스퍼터링에 의해 증착한 AZO 박막의 특성

  • Park, Yi-Seop (School of Materials Science and Engineering, Pusan National University) ;
  • Lee, Seung-Ho (Korea Institute of Ceramic Engineering and Technology) ;
  • Song, Pung-Keun (School of Materials Science and Engineering, Pusan National University)
  • Published : 2007.06.30
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Abstract

Aluminum doped zinc oxide (AZO) films were deposited on non-alkali glass substrate by DC magnetron sputtering with 3 types of AZO targets (doped with 1.0 wt%, 2.0 wt%, 3.0 wt% $Al_2O_3$). Electrical, optical properties and microstructure of AZO films have been investigated by Hall effect measurements, UV/VIS/NIR spectrophotometer, and XRD, respectively. Crystallinity of AZO films increased with increasing substrate temperature ($T_s$) and doping ratio of Al. Resistivity and optical transmittance in visible light were $8.8{\times}10^{-4}{\Omega}cm$ and above 85%, respectively, for the AZO film deposited using AZO target (doped with 3.0 wt% $Al_2O_3$) at $T_s$ of $300^{\circ}C$. On the other hand, transmittance of AZO films in near-infrared region decreased with increasing $T_s$ and doping ratio of Al, which could be attributed to the increase of carrier density.

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