Transactions on Electrical and Electronic Materials

The Korean Institute of Electrical and Electronic Material Engineers (한국전기전자재료학회)
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Copper Phthalocyanine Field-effect Transistor Analysis using an Maxwell-wagner Model

  • Lee, Ho-Shik (Department of Hospital Biomedical Engineering, Dongshin University) ;
  • Yang, Seung-Ho (Department of Hospital Biomedical Engineering, Dongshin University) ;
  • Park, Yong-Pil (Department of Hospital Biomedical Engineering, Dongshin University) ;
  • Lim, Eun-Ju (Department of Physical Electronics, Tokyo Institute of Technology) ;
  • Iwamoto, Mitsumasa (Department of Physical Electronics, Tokyo Institute of Technology)
  • Published : 2007.07.26
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Abstract

Organic field-effect transistor (FET) based on a copper Phthalocyanine (CuPc) material as an active layer and a $SiO_2$ as a gate insulator were fabricated and analyzed. We measured the typical FET characteristics of CuPc in air. The electrical characteristics of the CuPc FET device were analyzed by a Maxwell-Wagner model. The Maxwell-Wagner model employed in analyzing double-layer dielectric system was helpful to explain the C-V and I-V characteristics of the FET device. In order to further clarity the channel formation of the CuPc FET, optical second harmonic generation (SHG) measurement was also employed. Interestingly, SHG modulation was not observed for the CuPc FET. This result indicates that the accumulation of charge from bulk CuPc makes a significant contribution.

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References

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