Journal of Industrial and Engineering Chemistry

The Korean Society of Industrial and Engineering Chemistry (한국공업화학회)
권호 표지

Synthesis of gallium-catalyzed silicon nanowires by hydrogen radical-assisted deposition method

Jeon, Min-Sung;Tomitsuka, Yoshihiro;Kamisako, Koichi

  • Published : 20081100
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Abstract

Gallium-catalyzed silicon nanowires (SiNWs) were synthesized by the hydrogen radical-assisted deposition method. The voluminous quantities of SiNWs with various crystal growth directions were synthesized and their characteristics were estimated by using XRD, FESEM, TEM and EDX analyses. Most of the Ga-capped SiNWs were directly grown with some smoothly curved SiNWs. Large quantities of small- SiNWs with diameters of 20–80 nm were tree-likely grown on the large-SiNWs surface. The diameters of large-SiNWs were approximately 200 nm–2 mm. Furthermore, a simple model of growth mechanism for sub-grown silicon nanowires by the hydrogen radical-assisted deposition method was proposed.

Keywords

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