Transactions on Electrical and Electronic Materials

The Korean Institute of Electrical and Electronic Material Engineers (한국전기전자재료학회)
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A Study on Improvement and Degradation of Si/SiO2 Interface Property for Gate Oxide with TiN Metal Gate

  • Lee, Byung-Hyun (Advanced Technology Development Team 1, Semiconductor R&D Division, Samsung Electronics, Co. Ltd., School of Information and Communication Engineering, Sungkyunkwan University) ;
  • Kim, Yong-Il (Advanced Technology Development Team 1, Semiconductor R&D Division, Samsung Electronics, Co. Ltd.) ;
  • Kim, Bong-Soo (Advanced Technology Development Team 1, Semiconductor R&D Division, Samsung Electronics, Co. Ltd.) ;
  • Woo, Dong-Soo (Advanced Technology Development Team 1, Semiconductor R&D Division, Samsung Electronics, Co. Ltd.) ;
  • Park, Yong-Jik (Advanced Technology Development Team 1, Semiconductor R&D Division, Samsung Electronics, Co. Ltd.) ;
  • Park, Dong-Gun (Advanced Technology Development Team 1, Semiconductor R&D Division, Samsung Electronics, Co. Ltd.) ;
  • Lee, Si-Hyung (Process Development Team, Semiconductor R&D Division, Samsung Electronics, Co. Ltd.) ;
  • Rho, Yong-Han (School of Information and Communication Engineering, Sungkyunkwan University)
  • Published : 2008.02.29
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Abstract

In this study, we investigated effects of hydrogen annealing (HA) and plasma nitridation (PN) applied in order to improve $Si/SiO_2$ interface characteristics of TiN metal gate. In result, HA and PN showed a positive effect decreasing number of interface state $(N_{it})$ respectively. After FN stress for verifying reliability, however, we identified rapid increase of $N_{it}$ for TiN gate with HA, which is attributed to hydrogen related to a change of $Si/SiO_2$ interface characteristic. In contrast to HA, PN showed an improved Nit and gate oxide leakage characteristic due to several possible effects, such as blocking of Chlorine (Cl) diffusion and prevention of thermal reaction between TiN and $SiO_2$.

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References

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