Transactions on Electrical and Electronic Materials

The Korean Institute of Electrical and Electronic Material Engineers (한국전기전자재료학회)
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Study of Thermal Stability of Ni Silicide using Ni-V Alloy

  • Zhong, Zhun (Department of Electrical Engineering, Chungnam National University) ;
  • Oh, Soon-Young (Department of Electrical Engineering, Chungnam National University) ;
  • Lee, Won-Jae (Department of Electrical Engineering, Chungnam National University) ;
  • Zhang, Ying-Ying (Department of Electrical Engineering, Chungnam National University) ;
  • Jung, Soon-Yen (Department of Electrical Engineering, Chungnam National University) ;
  • Li, Shi-Guang (Department of Electrical Engineering, Chungnam National University) ;
  • Lee, Ga-Won (Department of Electrical Engineering, Chungnam National University) ;
  • Wang, Jin-Suk (Department of Electrical Engineering, Chungnam National University) ;
  • Lee, Hi-Deok (Department of Electrical Engineering, Chungnam National University) ;
  • Kim, Yeong-Cheol (Department of Materials Engineering, Korea University of Technology and Education)
  • Published : 2008.04.30
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Abstract

In this paper, thermal stability of Nickel silicide formed on p-type silicon wafer using Ni-V alloy film was studied. As compared with pure Ni, Ni-V shows better thermal stability. The addition of Vanadium suppresses the phase transition of NiSi to $NiSi_2$ effectively. Ni-V single structure shows the best thermal stability compared with the other Ni-silicide using TiN and Co/TiN capping layers. To enhance the thermal stability up to $650^{\circ}C$ and find out the optimal thickness of Ni silicide, different thickness of Ni-V was also investigated in this work.

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References

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