Journal of the Institute of Electronics Engineers of Korea SD (대한전자공학회논문지SD)

The Institute of Electronics and Information Engineers (대한전자공학회)
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Deuterium Ion Implantation for The Suppression of Defect Generation in Gate Oxide of MOSFET

MOSFET 게이트 산화막내 결함 생성 억제를 위한 효과적인 중수소 이온 주입

  • Lee, Jae-Sung (Division of Information and Communication Engineering, Uiduk University) ;
  • Do, Seung-Woo (School of Electrical Engineering and Computer Science, Kyungpook National University) ;
  • Lee, Yong-Hyun (School of Electrical Engineering and Computer Science, Kyungpook National University)
  • 이재성 (위덕대학교 정보통신공학부) ;
  • 도승우 (경북대학교 전자전기컴퓨터학부) ;
  • 이용현 (경북대학교 전자전기컴퓨터학부)
  • Published : 2008.07.25
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Abstract

Experiment results are presented for gate oxide degradation under the constant voltage stress conditions using MOSFETs with 3-nm-thick gate oxides that are treated by deuterium gas. Two kinds of methods, annealing and implantation, are suggested for the effective deuterium incorporation. Annealing process was rather difficult to control the concentration of deuterium. Because the excess deuterium in gate oxide could be a precursor for the wear-out of gate oxide film, we found annealing process did not show improved characteristics in device reliability, compared to conventional process. However, deuterium implantation at the back-end process was effective method for the deuterated gate oxide. Device parameter variations as well as the gate leakage current depend on the deuterium concentration and are improved by low-energy deuterium implantation, compared to those of conventional process. Especially, we found that PMOSFET experienced the high voltage stress shows a giant isotope effect. This is likely because the reaction between "hot" hole and deuterium is involved in the generation of oxide trap.

중수소 처리된 3 nm 두께의 게이트 산화막을 갖는 MOSFET를 제조하여 정전압 스트레스 동안의 게이트 산화막의 열화를 조사하였다. 중수소 처리는 열처리와 이온 주입법을 사용하여 각각 이루어졌다. 열처리 공정을 통해서는 게이트 산화막내 중수소의 농도를 조절하기가 힘들었다. 게이트 산화막내에 존재하는 과잉 중수소 결합은 열화를 가속시키기 때문에, 열처리 공정을 행한 소자에서 신뢰성이 표준공정에 의한 소자에 비해 저하되고 있음을 확인하였다. 그러나 중수소 이온 주입 방법을 통해서는 소자의 신뢰성이 개선됨을 확인하였다. 스트레스에 의한 게이트 누설 전류 변화 및 구동 특성 변화는 게이트 산화막내의 중수소 농도와 관련이 있으며, 이러한 특성은 적절한 공정 조건을 갖는 이온 주입법을 통해 개선할 수 있었다. 특히, 큰 스트레스 전압의 PMOSFET에서 중수소의 효과가 뚜렷하게 나타났으며, 이는 "hot" 정공과 중수소의 반응과 관련이 있는 것으로 판단된다.

Keywords

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