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Flexible Organic Thin-film Transistors for Photodetectors

  • Kwon, Jae-Hong (Display and Nanosystem Laboratory, College of Engineering, Korea University) ;
  • Shin, Sang-Il (Display and Nanosystem Laboratory, College of Engineering, Korea University) ;
  • Kim, Chang-Hoon (Display and Nanosystem Laboratory, College of Engineering, Korea University) ;
  • You, In-Kyu (Research Laboratory/Flexible Devices Team, Convergence and Components & Materials, Electronics and Telecommunications Research Institute) ;
  • Cho, Gyeong-Ik (Research Laboratory/Flexible Devices Team, Convergence and Components & Materials, Electronics and Telecommunications Research Institute) ;
  • Ju, Byeong-Kwon (School of Electrical Engineering, College of Engineering, Korea University)
  • Published : 20090700

Abstract

In this paper, we report on organic thin-film transistors (OTFTs) fabricated on plastic substrates by using 6,13-bis(triisopropylsilylethynyl)pentacene (TIPS-pentacene) as an organic semiconductor and cross-linked poly-4-vinylphenol as the gate dielectric. From these devices, we obtained exemplary I-V characteristics in the dark. We observed that the TIPS-pentacene-based OTFTs showed an efficient photo-current response under illumination with a halogen lamp. From these electrical properties, we found that the threshold voltage and the on-current were about -6 V and $6.65{\times}10^{-7}$ A, respectively, in the dark. However, after illumination, the threshold voltage and the on-current were 3.9 V and $1.32{\times}10^{-6}$ A, respectively.

Keywords

Acknowledgement

This work was supported by the National Research Laboratory (NRL, R0A-2007-000-20111-0) Program of the Ministry of Science and Technology (Korea Science and Engineering Foundation), Industrial-Education Cooperation Program between Korea University and L.G. Display Co. Ltd., and the IT R &D program of Ministry of Knowledge Economy of Korea (MKE, 2008-F024-01, Development of Mobile Flexible IOP Platform).

References

  1. S. K. Park, J. E. Anthony and T. N. Jackson, IEEE Elec. Dev. Lett. 28, 877 (2007) https://doi.org/10.1109/LED.2007.905374
  2. B.-H. Lee and H. J. Kim, J. Elec. Eng. Tech. 2, 373 (2007) https://doi.org/10.5370/JEET.2007.2.3.373
  3. H. Y. Cheng, C. C. Lee, T. S. Hu and J. C. Ho, J. Korean Phys. Soc. 48, S115 (2006)
  4. Y. K. Moon, S. H. Kim, D. Y. Moon, W. S. Kim and J. W. Park, J. Korean Phys. Soc. 51, 1732 (2007) https://doi.org/10.3938/jkps.51.1732
  5. T. W. Kelley, P. F. Baude, C. Gerlach, D. E. Ender, D. Muyres, M. A. Haase, D. E. Vogel and S. D. Theiss, Chem. Mater. 16, 4413 (2004) https://doi.org/10.1021/cm049614j
  6. J. Kim, D. Kim, J. Burm, K. Chang and Y. J. Yoon, J. Korean Phys. Soc. 53, 831 (2008) https://doi.org/10.3938/jkps.53.831
  7. S. Uttiya, T. Kerdcharoen, S. Varanayon and S. Pratontep, J. Korean Phys. Soc. 52, 1575 (2008) https://doi.org/10.3938/jkps.52.1575
  8. J.-Y. Kim, T.-Z. Shin and M.-K. Yang, J. Elec. Eng. Tech. 2, 408 (2007) https://doi.org/10.5370/JEET.2007.2.3.408
  9. I. Graz, M. Kaltenbrunner, C. Keplinger, R. Schwodi auer, S. Bauer, S. P. Lacour and S. Wagner, Appl. Phys. Lett. 89, 073501 (2006) https://doi.org/10.1063/1.2335838
  10. D. Park, J. Heo, J. Kwon and I. Chung, J. Korean Phys. Soc. 54, 687 (2009) https://doi.org/10.3938/jkps.54.687
  11. Y. Jang, D. H. Kim, Y. D. Park, J. H. Cho, M. Hwang and K. Cho, Appl. Phys. Lett. 87, 152105 (2005) https://doi.org/10.1063/1.2093940
  12. D. K. Hwang, W. Choi, J. M. Choi, K. Lee, J. H. Park, E. Kim, J. H. Kim and S. Im, J. Electochem. Soc. 154, H933 (2007) https://doi.org/10.1149/1.2775169
  13. S. Steudel, S. D. Vusser, S. D. Jonge, D. Janssen, S. Verlaak, J. Genoe and P. Heremans, Appl. Phys. Lett. 85, 4400 (2004) https://doi.org/10.1063/1.1815042
  14. J.-H. Kwon, J.-H. Seo, S.-I. Shin, K.-H. Kim, D. H. Choi, I. B. Kang, H. Kang and B. K. Ju, IEEE Trans. Electron Devices 55, 500 (2008) https://doi.org/10.1109/TED.2007.913007
  15. M. C. Hamilton, S. Martin and J. Kanicki IEEE Trans. Electron Devices 51, 877 (2004) https://doi.org/10.1109/TED.2004.829619
  16. R. R. Troutman and A. Kotwal, IEEE Trans. Electron Devices 36, 2915 (1989) https://doi.org/10.1109/16.40955