Journal of the Korean Physical Society

Korean Physical Society (한국물리학회)
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Fabrication and Properties of GaN MIS Capacitors with a Remote-Plasma Atomic-Layer-Deposited $Al_2O_3$ Gate Dielectric

Yun, Hyeong-Seon;Kim, Kwang-Ho

  • Published : 20090200
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Abstract

$Al_2O_3$ thin films were deposited on GaN (0001) by using a remote-plasma atomic-layer-deposition (RPALD) technique with a trimethylaluminum(TMA) precursor and oxygen radicals in the temperature range of 25 $\sim$ 500 $^{\circ}C$. The growth rate per cycle was varied with the substrate temperature from 1.8 $\AA$/cycle at 25 $^{\circ}C$ to 0.8 $\AA$/cycle at 500 $^{\circ}C$. The chemical structure of the $Al_2O_3$ thin films was studied using X-ray photoelectron spectroscopy (XPS). The electrical properties of $Al_2O_3$/GaN Metal-Insulator-Semiconductor (MIS) capacitor grown at a 300 $^{\circ}C$ process temperature were excellent, a low electrical leakage current density (${\sim}10^{-10}$ A/$cm^2$ at 1 MV) at room temperature and a high dielectric constant of about 7 with a thinner oxide thickness of 12 nm. The interface trap density ($D_{it}$) was estimated using a high-frequency C-V method measured at 300 $^{\circ}C$. These results show that the RPALD technique is an excellent choice for depositing high-quality $Al_2O_3$ as a gate dielectric in GaN-based devices.

Keywords

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