Journal of the Korean Physical Society

Korean Physical Society (한국물리학회)
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Effect of Post Thermal Annealing on Femtosecond Laser Crystallization of 500-nm-thick Amorphous Silicon Films

  • Lee, Geon-Joon (Quantum Photonic Science Research Center and Department of Physics, Hanyang University) ;
  • Lee, Young-Pak (Quantum Photonic Science Research Center and Department of Physics, Hanyang University) ;
  • Kim, Sung-Soo (Department of Physics, Sogang University) ;
  • Cheong, Hyeon-Sik (Department of Physics, Sogang University) ;
  • Yoon, Chong-Seung (Division of Advanced Materials Science, Hanyang University) ;
  • Son, Yong-Duck (Department of Information Display, Kyung Hee University) ;
  • Jang, Jin (Department of Information Display, Kyung Hee University)
  • Published : 20090700
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Abstract

Femtosecond laser interference crystallization was studied in 500-nm-thick amorphous silicon (a-Si) films prepared on glass by using plasma-enhanced chemical-vapor deposition. The efficient crystallization of 500-nm-thick a-Si films was found to require post thermal annealing as well as laser annealing. Femtosecond laser interference technique was used to produce the seed pattern for the spatially-selected crystallization of a-Si. Post thermal annealing of the seed pattern was performed at 550 $^{\circ}C$ for 20 hours under a nitrogen atmosphere. By applying post thermal annealing to laser-crystallized silicon, the degree of crystallization was enhanced. The femtosecond laser-induced grating can be regarded as a pattern of alternating a-Si and ${\mu}c$-Si (microcrystalline silicon) bands with a period of about 2 ${\mu}m$. Probe-beam diffraction, micro-Raman spectroscopy, and transmission electron microscopy were used to investigate the diffraction behavior and to confirm the spatially-selected crystallization of a-Si.

Keywords

Acknowledgement

This work was supported by the Korea Science and Engineering Foundation (KOSEF) through the Quantum Photonic Science Research Center.

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