Current Applied Physics

Korean Physical Society (한국물리학회)
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Effect of oxygen ambient on structural, optical and electrical properties of epitaxial Al-doped ZnO thin films on r-plane sapphire by pulsed laser deposition

Kumar, Manoj;Mehra, R.M.;Choi, Se-Young

  • Published : 20090700
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Abstract

Al-doped ZnO (ZnO:Al) thin films were grown epitaxially on r-plane sapphire substrate by pulsed laser deposition. Substrate temperature of 400 $^{\circ}C$ and pulsed repetition rate of 5 Hz was kept constant during the deposition. The effect of oxygen ambient pressure from 0.1 to 10 mTorr on structural, optical and electrical properties of the ZnO:Al films were investigated. The lowest resistivity was found to be 2.14 ${\times}$ $10^{-3}$ $\Omega$-cm with a carrier concentration of 6.89 ${\times}$ 1019 $cm^{-3}$ for the film deposited in 1 mTorr of oxygen pressure. ZnO:Al film revealed smoother surface obtained at oxygen ambient pressure of 1 mTorr. The epitaxial relationship between ZnO:Al films and r-plane sapphire was found to be (0001)$_{ZnO}$ // (01$\bar{1}$2)$_{sapp}$ and [10$\bar{1}$0]$_{ZnO}$ // [0$\bar{1}$11]$_{sapp}$. Photoluminescence spectra of the film grown at the oxygen ambient pressure of 1 mTorr exhibited peak at 3.34 eV, without any deep level.

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