Transactions on Electrical and Electronic Materials

The Korean Institute of Electrical and Electronic Material Engineers (한국전기전자재료학회)
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Etching Mechanism of Indium Tin Oxide Thin Films using Cl2/HBr Inductively Coupled Plasma

  • Kim, Sung-Ihl (Department of IT Electronics Engineering, Daejon University) ;
  • Kwon, Kwang-Ho (Department of Control and Instrumentation Engineering, Korea University)
  • Published : 2009.02.28
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Abstract

Dry etching characteristics of indium tin oxide films and etch selectivities over photoresist films were investigated using $Cl_2/HBr$ inductively coupled plasma. From a Langmuir probe diagnostic system, it was observed that while the plasma temperature was kept nearly constant in spite of the change of the HBr mixing ratio, the positive ion density decreases rapidly with increasing the mixing ratio. On the other hand, a quadrupole mass spectrometer showed that the neutral HBr and Br species increased. The etching mechanism in the $HBr/Cl_2$ plasma was analyzed.

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