Journal of the Korean Vacuum Society (한국진공학회지)

The Korean Vacuum Society (한국진공학회)
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Study on Growth Optimization of InAs/GaSb Strained-Layer Superlattice Structures by High-Resolution XRD Analysis

고분해능 XRD 분석에 의한 InAs/GaSb 응력초격자 구조의 성장 최적화 연구

  • Kim, J.O. (Department of Physics, Kyung Hee University) ;
  • Shin, H.W. (Department of Physics, Kyung Hee University) ;
  • Choe, J.W. (Department of Physics, Kyung Hee University) ;
  • Lee, S.J. (Global Research Laboratory on Quantum Detector Technology, Korea Research Institute of Standards and Science) ;
  • Kim, C.S. (Global Research Laboratory on Quantum Detector Technology, Korea Research Institute of Standards and Science) ;
  • Noh, S.K. (Global Research Laboratory on Quantum Detector Technology, Korea Research Institute of Standards and Science)
  • 김준오 (경희대학교 물리학과) ;
  • 신현욱 (경희대학교 물리학과) ;
  • 최정우 (경희대학교 물리학과) ;
  • 이상준 (한국표준과학연구원 나노소재측정센터 양자검출소자기술 글로벌연구실) ;
  • 김창수 (한국표준과학연구원 나노소재측정센터 양자검출소자기술 글로벌연구실) ;
  • 노삼규 (한국표준과학연구원 나노소재측정센터 양자검출소자기술 글로벌연구실)
  • Published : 2009.07.30
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Abstract

For the growth optimization of InAs/GaSb (8/8-ML) strained-layer superlattice (SLS), the structure has been grown under various conditions and modes and characterized by the high-resolution x-ray diffraction (XRD) analysis. In this study, the strain modulation is induced by changing parameters and modes, such as the growth temperature, the ratio of V/III beam-equivalent-pressure (BEP), and the growth interruption (GI), and the strain variation is analyzed by measuring the angle separation of 0th-order satellite peak in XRD patterns. The XRD results reveal that the growth temperature and the V/III(Sb/Ga) ratio are major parameters to change the crystallineity and the strain modulation in SLS structures, respectively. We have observed that the SLS samples with compressive strain prepared in this study are show a transition to tensile strain with decreasing V/III(Sb/Ga) ratio, and the GI process is a sensitive factor giving rise to strain modulation. These results obtained in this study suggest that optimized growth temperature and V/III(Sb/Ga) ratio are $350^{\circ}C$ and 20, respectively, and the appropriate GI time is approximately 3 seconds just before InAs growth that the crystallineity is maximized and the strain relaxation is minimized.

InAs/GaSb (8/8-ML) 응력초격자 (SLS)의 성장 변수를 최적화하기 위하여, 다양한 조건 및 모드에서 SLS 구조를 제작하여 고분해능 X선회절 (XRD) 특성을 분석하였다. 본 연구에서는 성장온도, V/III 분자선 비율, 성장일시정지 (growth interruption, GI) 등의 변화를 통하여 SLS 계면층의 응력 변조를 유도하였고, XRD 0차 위성피크의 변위로서 응력의 변화를 고찰하였다. XRD 분석 결과로부터, SLS의 결정성과 응력의 변화를 유발하는 주요 변수는 각각 성장온도와 V/III(Sb/Ga) 비율임을 보여 주었다. 압축변형을 가지고 있는 본 연구에서 제작한 SLS 시료는 V/III(Sb/Ga) 비율의 감소에 따라 인장변형으로 전환됨을 보여 주었으며, GI 모드 및 시간에 따라 응력이 민감하게 변함을 관측할 수 있었다. 본 연구 결과로부터, [InAs/GaSb]-SLS ([8/8]-ML)의 최적 성장온도와 V/III(Sb/Ga) 비율는 각각 $350^{\circ}C$와 20이고, 결정성을 극대화하고 응력완화를 감소시키기 위해서는 InAs 성장 직전 약 3초 동안의 GI방법이 유효함을 보였다.

Keywords

References

  1. S. K. Noh, S. J. Lee, Y. H. Ryu, S. M. Choe, and S. H. Park, New Phys. 54, 484 (2007)
  2. S. Krishna, D. Forman, S. Annamalai, P. Dowd, P. Varangis, T. Tumolillo, Jr., A. Gray, J. Zilko, K. Sun, M. Liu, J. campbell, and D. Carothers, Appl. Phys. Lett. 86, 193501 (2005) https://doi.org/10.1063/1.1924887
  3. S. Tsao, H. Lim, W. Zhang, and M. Razeghi, Appl. Phys. Lett. 90, 201109 (2007) https://doi.org/10.1063/1.2740111
  4. J. O. Kim, S. J. Lee, S. K. Noh, J. W. Choe, and T. W. Kang, J. Korean Phys. Soc. 53, 2100 (2008) https://doi.org/10.3938/jkps.53.2100
  5. P. S. Dutta and H. L. Bhat, J. Appl. Phys. 81, 5821 (1997) https://doi.org/10.1063/1.365356
  6. J. O. Kim, H. W. Shing, J. W. Choe, S. J. Lee, C. S. Kim, and S. K. Noh, J. Korean Vac. Soc.18, 108 (2009) https://doi.org/10.5757/JKVS.2009.18.2.108
  7. H. Kroemer, Physica E 20, 196 (2004) https://doi.org/10.1016/j.physe.2003.08.003
  8. B.-M. Nguyen, D. Hoffman, P.-Y. Delaunay, and M. Razeghi, Appl. Phys. Lett. 91, 163511 (2007) https://doi.org/10.1063/1.2800808
  9. E. Plis, J. B. Rodriguez, H. S. Kim, G. Bishop, Y. Sharma, R. Dawson, S. J. Lee, C. E. Jones, V. Gopal, and S. Krishna, Appl. Phys. Lett. 91, 133512 (2007) https://doi.org/10.1063/1.2790078
  10. S. Mou, A. Petschke, Q. Liu, S. L. Chuang, J. V. Li, and C. J. Hill, Appl. Phys. Lett. 92, 153505 (2008) https://doi.org/10.1063/1.2909538
  11. H. S. Kim, E. Plis, J. B. Rodriguez, G. D. Bishop, Y. D. Sharma, L. R. Dawson, S. Krishna, J. Bundas, R. Cook, D. Burrows, R. Dennis, K. Patnaude, A. Reisinger, and M. Sundaram, Appl. Phys. Lett. 92, 183502 (2008) https://doi.org/10.1063/1.2920764
  12. S. Maison and G. W. Wicks, Appl. Phys. Lett. 89, 151109 (2006) https://doi.org/10.1063/1.2360235
  13. A. Khoshakhlagh, J. B. Rodriguez, E. Plis, G. D. Bishop, Y. D. Sharma, H. S. Kim, L. R. Dawson, and S. Krishna, Appl. Phys. Lett. 91, 263504 (2007) https://doi.org/10.1063/1.2824819
  14. G. C. Dente and M. L. Tilton, J. Appl. Phys. 86, 1420 (1999) https://doi.org/10.1063/1.370905
  15. S. J. Lee, S. K. Noh, L. R. Dawson, and S. Krishna, J. Korean Phys. Soc. 54, 280 (2009) https://doi.org/10.3938/jkps.54.280
  16. X. B. Zhang, J. H. Ryou, R. D. Dupuis, C. Xu, S. Mou, A. Petschke, K. C. Hsieh, and S. L. Chuang, Appl. Phys. Lett. 90, 131110 (2007) https://doi.org/10.1063/1.2717524
  17. D. Behr, J. Wagner, J. Schmitz, N. Herres, J. D. Ralston, P. Koidl, M. Ramsteiner, L. Schrottke, and G. Jungk, Appl. Phys. Lett. 65, 2972 (1994) https://doi.org/10.1063/1.112480
  18. J. Steinshnider, M. Weimer, R. Kaspi, and G. W. Turner, Phys. Rev. Lett. 85, 2953 (2000) https://doi.org/10.1103/PhysRevLett.85.2953
  19. J. O. Kim, H. W. Shin, J. W. Choe, S. J. Lee, and S. K. Noh, J. Korean Vac. Soc. 18, 127 (2009) https://doi.org/10.5757/JKVS.2009.18.2.127

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