JSTS:Journal of Semiconductor Technology and Science

The Institute of Electronics and Information Engineers (대한전자공학회)
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Investigation of Thermal Noise Factor in Nanoscale MOSFETs

  • Jeon, Jong-Wook (Semiconductor Research Center, Samsung Electronics) ;
  • Park, Byung-Gook (ISRC and School of Electrical Engineering, Seoul National University) ;
  • Shin, Hyung-Cheol (ISRC and School of Electrical Engineering, Seoul National University)
  • Received : 2010.05.24
  • Accepted : 2010.09.08
  • Published : 2010.09.30
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Abstract

In this paper, we investigate the channel thermal noise in nanoscale MOSFETs. Simple analytical model of thermal noise factor in nanoscale MOSFETs is presented and it is verified with accurately measured noise data. The noise factor is expressed in terms of the channel conductance and the electric field in the gradual channel region. The proposed noise model can predict the channel thermal noise behavior in all operating bias regions from the long-channel to nanoscale MOSFETs. From the measurement results, we observed that the thermal noise model for the long-channel MOSFETs does not always underestimate the short-channel thermal noise.

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References

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