Journal of the Korean Physical Society

Korean Physical Society (한국물리학회)
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Excitation Wavelength Dependence of Terahertz Radiation from InAs: UV versus IR

Jeong, Hoon-Il;Jeong, Ji-Hoon;Song, G.-Hugh;Jho, Young-Dahl

  • Published : 20100100
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Abstract

Terahertz (THz) radiation measurements from p-doped InAs (carrier density: $\sim$ 7 ${\times}$ 10$^{17}$ cm$^{-3}$) surfaces were carried out encompassing both IR (770–830 nm) and UV (360–385 nm) excitations by employing two synchronized femtosecond lasers. Each laser was independently tunable, and the jitter was controlled below the pulse width ($\sim$150 fs). One laser was used for THz generation, and the other for detection via a photoconductive antenna. For the IR-pulse excitation, two frequency components were observed, between which the higher-side peak disappeared as we tuned the excitation wavelength toward the UV range.

Keywords

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