Journal of the Korean Physical Society

Korean Physical Society (한국물리학회)
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Comparison between SiOC Thin Films Fabricated by Using Plasma Enhance Chemical Vapor Deposition and SiO$_{2}$ Thin Films by Using Fourier Transform Infrared Spectroscopy

Oh, Teresa;Choi, Chi-Kyu

  • Published : 20100400
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Abstract

SiOC thin films were deposited by using inductively coupled plasma chemical vapor deposition, and the detailed chemical properties were analyzed by using Fourier transform infrared (FTIR) spectroscopy. According to their chemical properties determined by using FTIR spectra, the dielectric constant of the SiOC film was found to be decreased due to the ionic polarization between the hydrophilic and the hydrophobic properties. The broad bonding mode in the range of 640 950 cm$^{-1}$ consisted of Si-C (740 cm$^{-1}$), C-O (820 cm$^{-1}$), and Si-O (884 cm$^{-1}$) bonds, and the peak intensity of these bonds varied with the chemical properties. The hydrophilic properties of the SiOC film showed a dominant of Si-C (740 cm$^{-1}$) bond; however, the hydrophobic properties of SiOC film displayed a dominant C-O (820 cm$^{-1}$) bond. The SiOC thin film with hybrid-type hydrophilic and hydrophobic properties showed a dominant of Si-O (884 cm$^{-1}$) bond and had the lowest dielectric constant because of a lowering of the polarization between the hydrophilic and the hydrophobic properties.

Keywords

References

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