Current Applied Physics

Korean Physical Society (한국물리학회)
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Properties of $CuIn_xGa_{1-x}Se_2$ thin films grown from electrodeposited precursors with different levels of selenium content

Kang, Feng;Ao, Jianping;Sun, Guozhong;He, Qing;Sun, Yun

  • Published : 20100000
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Abstract

In this paper, polycrystalline $CuIn_xGa_{1-x}Se_2$ (CIGS) thin film absorbers were prepared by selenizing electrodeposited (ED) precursors with two different levels of selenium content: rich in selenium and poor in selenium. Comparing the results obtained by X-ray fluorescence (XRF), X-ray diffraction (XRD), scanning electron microscopy (SEM) and illuminated current–oltage (J-V), it was found that absorber layers processed from Se-poor ED precursors shows better crystalline quality and increased gallium incorporation, which thus improved cell performance, compared to the layers grown using Se-rich ED precursors. The best cell fabricated from Se-poor ED precursor shows a conversion efficiency of 1.63% at AM1.5 global light.

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