Electronic Materials Letters

The Korean Institute of Metals and Materials (대한금속재료학회)
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Segregation and Thermal Dissociation of Hydrogen at the (110)/(001) Silicon Grain Boundary

Park, Yong-Kook;Lu, Jinggang;Rozgonyi, George

  • Published : 20100000
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Abstract

In this article, segregation and thermal dissociation kinetics of hydrogen at a large-angle general grain boundary in crystalline silicon have been investigated using deuterium, a readily identifiable isotope that duplicates hydrogen chemistry. Segregation or trapping of introduced deuterium (hydrogen) was found to take place at the (110)/(001) Si grain boundary. The segregation coefficient (k) of deuterium (hydrogen) at the grain boundary was determined as $k\approx24{\pm}3$ at $100{^{\circ}C}$. Thermal dissociation of deuterium (hydrogen) from the grain boundary obeyed first-order kinetics with an activation energy of -1.62 eV.

Keywords

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