Journal of the Korean Institute of Electrical and Electronic Material Engineers (한국전기전자재료학회논문지)

The Korean Institute of Electrical and Electronic Material Engineers (한국전기전자재료학회)
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A Study on Buffer Layer Design for Transmittance Improvement of Indium Tin Oxide

ITO 투과율 향상을 위한 Buffer층 설계에 관한 연구

  • 기현철 (한국광기술원 광소자팀) ;
  • 이정빈 (한국폴리텍V대학 전기계측제어과) ;
  • 김상기 ((주)링크라인 아이앤씨) ;
  • 홍경진 (광주대학교 신소재공학과)
  • Published : 2010.01.01
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Abstract

We have proposed an Buffer layer to improve the transmittance of ITO. Here, $SiO_2$ and $TiO_2$ were selected as the Buffer layer coating material. The structures of Buffer layer were designed in ITO/$SiO_2/TiO_2$/Glass and ITO/Glass/$TiO_2/SiO_2$. Then, these materials were deposited by ion-assisted deposition system. Transmittances of deposited ITO were 86.14 and 85.07%, respectively. These results show that the proposed structure has higher transmittance than the conventional ITO device.

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References

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