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Origin of bistable memory characteristics of organic light-emitting diodes with LiF/Al cathode

  • Yook, Kyoung-Soo (Department of Polymer Science and Engineering, Dankook University) ;
  • Lee, Jun-Yeob (Department of Polymer Science and Engineering, Dankook University)
  • Received : 2009.10.27
  • Accepted : 2009.12.18
  • Published : 2010.03.25

Abstract

Bistable memory performances of organic light-emitting diodes (OLEDs) with LiF/Al cathode were investigated and the origin of bistability was studied. LiF was essential to get stable memory performances in OLEDs and on/off ratio was improved by more than 50 times by using LiF/Al instead of Al cathode. High on/off ratio over 1000 was obtained from switching test and the multilevel switching of organic light-emitting bistable devices (OLEBDs) was realized by changing the writing voltage of OLEBDs. $AlF_3$ formation at the interface during evaporation of Al was proposed as the main mechanism for bistability of OLEBDs.

Keywords

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