Journal of the Korean Physical Society

Korean Physical Society (한국물리학회)
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Preparation of Zinc-tin-oxide Thin Film by Using an Atomic Layer Deposition Methodology

  • Received : 2010.06.04
  • Accepted : 2010.10.14
  • Published : 2010.12.01
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Abstract

A zinc-tin-oxide thin film was prepared by using atomic layer deposition (ALD) with diethyl zinc and tetrakis (ethylmethylamino) tin precursors. The ratios of zinc to tin were formulated to range from 1:1 to 10:1. The average growth rate of the zinc-tin-oxide films was about 1.4 ~ 1.9 A/cycle. The average growth rate increased gradually with increasing zinc-to-tin ratio at a substrate temperature of $150^{\circ}C$. ALD-grown zinc-tin-oxide thin film was characterized using x-ra diffraction, atomic force microscopy, and X-ray photoelectron spectroscopy. Thermal annealing increased the crystallinity, but not affect the surface roughness much, and increased the amount of zinc in the composition.

Keywords

Acknowledgement

Supported by : Hoseo University

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