Journal of the Korean Physical Society

Korean Physical Society (한국물리학회)
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p-type Conduction in ZnO Nanowire Schottky Field-effect Transistors with Pt Metal Electrodes

  • Jeong, Du-Won (Department of Physics and Institute of Physics and Chemistry, Chonbuk National University) ;
  • Kim, Ju-Jin (Department of Physics and Institute of Physics and Chemistry, Chonbuk National University) ;
  • Lee, Jeong-O (Advanced Material Division, Korea Research Institute of Chemical Engineering)
  • Published : 2011.11.15
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Abstract

To obtain p-type conduction in a ZnO nanowire, field effect transistors were fabricated from a short ZnO nanowire with Pt contact electrodes. Since Pt metal has a high work function and is chemically inert, the Fermi level can align with the valence band side of the ZnO nanowire in such a way as to produce a high Schottky barrier. The current-voltage characteristics showed a non-linear behavior due to the high Schottky barrier between the ZnO nanowire and the Pt, and the gate transfer curves exhibited a weak p-type conduction behavior. To further enhance the hole conduction in the ZnO nanowire channel, we exposed the devices to $F_2$ gas, which is effective at capturing electrons. The $F_2$ adsorbed onto the ZnO FET and improved the hole conduction behavior relative to that of the intrinsic ZnO FET. A p-type gate response was obtained in the high source-drain bias voltage region.

Keywords

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