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Fabrication and Characteristics of NiO-AZO Thin Films Deposited by Co-sputtering System for GaN LED Transparent Contact Electrode

코스퍼터링법을 이용한 GaN LED 투명접촉전극용 NiO-AZO 박막의 제조 및 물성평가

  • Park, Hee-Woo (Department of Materials Science and Engineering, Pusan National University) ;
  • Bang, Joon-Ho (Department of Materials Science and Engineering, Pusan National University) ;
  • Hui, Kwun Nam (Department of Materials Science and Engineering, Pusan National University) ;
  • Song, Pung-Keun (Department of Materials Science and Engineering, Pusan National University)
  • Received : 2011.11.17
  • Accepted : 2011.12.30
  • Published : 2011.12.31

Abstract

NiO-AZO films were deposited on glass substrate by DC and RF magnetron co-sputtering system in pure $O_2$ gas without substrate heating during deposition. In order to control the chemical composition of the film, NiO target was supplied with constant RF power of 150 W and AZO target (doped with 2.98 at% aluminum) with DC power varied between 40 W to 80 W. Deposited NiO-AZO films were evaluated by structural and chemical analysis. With introducing AZO, XRD and XPS data reveal that NiO were supplied with more oxygen. these results could be strongly affected by the higher bond enthalpy of NiO compared to ZnO, which makes it possible for NiO to obtain excessive oxygen from ZnO.

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References

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