Journal of the Institute of Electronics Engineers of Korea SD (대한전자공학회논문지SD)

The Institute of Electronics and Information Engineers (대한전자공학회)
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Process Development of Forming of One Body Fine Pitched S-Type Cantilever Probe in Recessed Trench for MEMS Probe Card

멤스 프로브 카드를 위한 깊은 트렌치 안에서 S 모양의 일체형 미세피치 외팔보 프로브 형성공정 개발

  • Kim, Bong-Hwan (Department of Electronics Engineering, Catholic University of Daegu)
  • 김봉환 (대구가톨릭대학교 전자공학과)
  • Received : 2010.08.09
  • Accepted : 2011.01.01
  • Published : 2011.01.25
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Abstract

We have developed the process of forming one body S-type cantilever probe in the recessed trench for fine-pitched MEMS probe card. The probe (cantilever beam and pyramid tip) was formed using Deep RIE etching and wet etching. The pyramid tip was formed by the wet etching using KOH and TMAH. The process of forming the curved probe was also developed by the wet etching. Therefore, the fabricated probe is applicable for the probe card for DRAM, Flash memory and RF devices tests and probe tip for IC test socket.

본 논문에서는 미세피치 프로브 카드 제작을 위한 S 모양의 일체형 외팔보 프로브 형성방법에 대하여 기술하였다. 마세 피치 프로브를 위하여 Deep RIE etching을 이용하여 실리콘 트렌치 안에 일체형 프로브 빔과 탑을 형성하는 방법을 사용하였고, 피라미드 팁의 형성을 위하여 KOH 및 TMAH 습식식각을 이용하였으며, 습식식각시 방향성을 가지는 실리콘 웨이퍼에서도 휘어진 형태의 프로브 빔을 형성할 수 있는 건식 식각 및 습식식각 방법을 제시하였다. 따라서 제작된 외팔보 형태의 프로브는 디렘(DRAM), 플레시 메모리 (Flash memory) 용 프로브 카드 제작에 사용될 뿐만 아니라 RF 소자용 프로브 카드, 아이씨 테스트 소켓 (IC test socket)용 프로브 탐침에도 사용 될 것이다.

Keywords

References

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