Journal of the Korean Vacuum Society (한국진공학회지)

The Korean Vacuum Society (한국진공학회)
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Simulation Study on the DC/RF Characteristics of MHEMTs

MHEMT 소자의 DC/RF 특성에 대한 시뮬레이션 연구

  • Son, Myung-Sik (Department of Electronic Engineering, Sunchon National University)
  • Received : 2011.06.24
  • Accepted : 2011.09.20
  • Published : 2011.09.30
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Abstract

GaAs-based metamorphic high electron mobility transistors (MHEMTs) and InP-based high electron mobility transistors (HEMTs) have good microwave and millimeter-wave frequency performance with lower minimum noise figure. MHEMTs have some advantages, especially for cost, compared with InP-based ones. In this paper, InAlAs/InxGa1-xAs/GaAs MHEMTs are simulated for DC/RF small-signal analysis. The hydrodynamic simulation parameters are calibrated to a fabricated 0.1-${\mu}m$ ${\Gamma}$-gate MHEMT device having the modulation-doped $In_{0.52}Al_{0.48}As/In_{0.53}Ga_{0.47}As$ heterostructure on the GaAs substrate, and the simulations for RF small-signal characteristics are performed, compared with the measured data, and analyzed for the devices. In addition, the simulations for the DC/RF characteristics of the MHEMTs with different gate-recess structures are performed, compared and analyzed.

GaAs나 InP 기반의 high electron mobility transistor (HEMT) 소자들은 우수한 마이크로파 및 밀리미터파 주파수 특성 및 이에 따른 우수한 저잡음 특성을 가지고 있다. GaAs 기판 위에 점진적으로 성장된 메타몰픽(Metamorphic) HEMTs (MHEMTs)는 InP 기판 위에 성정한 HEMT에 비해 비용 측면에서 커다란 장점을 가지고 있다. 본 논문에서는 이러한 MHEMT의 DC/RF 소신호 특성을 예측하기 위하여 InAlAs/InGaAs/GaAs MHEMT 소자들의 DC/RF 소신호 주파수 특성을 시뮬레이션하였다. 2차원 소자 시뮬레이터의 hydrodynamic 전송 모델을 사용하여 $In_{0.52}Al_{0.48}As/In_{0.53}Ga_{0.47}As$ 이종접합 구조를 갖는 제작된 0.1-${\mu}m$ ${\Gamma}$-게이트 MHEMT 소자에 대하여 파라미터 보정 작업을 수행한 후, MHEMT 소자들에 대해 DC 특성 및 RF 소신호 주파수 특성을 시뮬레이션하고 실험 데이터와 비교 분석하였다. 또한, 게이트 리세스 구조에 따른 MHEMT 소자들의 DC/RF 특성을 시뮬레이션하고 비교 분석하였다.

Keywords

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