Korean Journal of Metals and Materials (대한금속재료학회지)

The Korean Institute of Metals and Materials (대한금속재료학회)
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Fabrication of Mo Thin Film by Hydrogen Reduction of MoO3 Powder for Back Contact Electrode of CIGS

MoO3 분말의 수소환원을 통한 CIGS계 후면 전극용 Mo 박막제조

  • Jo, Tae Sun (Department of Materials Science and Engineering, Hanyang University) ;
  • Kim, Se Hoon (Department of Materials Science and Engineering, Hanyang University) ;
  • Kim, Young Do (Department of Materials Science and Engineering, Hanyang University)
  • 조태선 (한양대학교 신소재공학과) ;
  • 김세훈 (한양대학교 신소재공학과) ;
  • 김영도 (한양대학교 신소재공학과)
  • Received : 2010.10.24
  • Published : 2011.02.25
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Abstract

In order to obtain a suitable back contacting electrode for $Cu(InGa)Se_2$-based photovoltaic devices, a molybdenum thin film was deposited using a chemical vapor transport (CVT) during the hydrogen reduction of $MoO_3$ powder. A $MoO_2$ thin film was successfully deposited on substrates by using the CVT of volatile $MoO_3(OH)_2$ at $550^{\circ}C$ for 60 min in a $H_2$ atmosphere. The Mo thin film was obtained by reduction of $MoO_2$ at $650^{\circ}C$ in a $H_2$ atmosphere. The Mo thin film on the substrate presented a low sheet resistance of approximately $1{\Omega}/sq$.

Keywords

Acknowledgement

Supported by : 교육과학기술부

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