Journal of Sensor Science and Technology (센서학회지)

The Korean Sensors Society (한국센서학회)
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A Wide Dynamic Range CMOS Image Sensor Based on a Pseudo 3-Transistor Active Pixel Sensor Using Feedback Structure

  • Bae, Myunghan (School of Electronics Engineering, Kyungpook National University) ;
  • Jo, Sung-Hyun (School of Electronics Engineering, Kyungpook National University) ;
  • Lee, Minho (School of Electronics Engineering, Kyungpook National University) ;
  • Kim, Ju-Yeong (School of Electronics Engineering, Kyungpook National University) ;
  • Choi, Jinhyeon (Department of Sensor and Display Engineering, Kyungpook National University) ;
  • Choi, Pyung (School of Electronics Engineering, Kyungpook National University) ;
  • Shin, Jang-Kyoo (School of Electronics Engineering, Kyungpook National University)
  • Received : 2012.10.11
  • Accepted : 2012.10.23
  • Published : 2012.11.30
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Abstract

A dynamic range extension technique is proposed based on a 3-transistor active pixel sensor (APS) with gate/body-tied p-channel metal oxide semiconductor field effect transistor (PMOSFET)-type photodetector using a feedback structure. The new APS consists of a pseudo 3-transistor APS and an additional gate/body-tied PMOSFET-type photodetector, and to extend the dynamic range, an NMOSFET switch is proposed. An additional detector and an NMOSFET switch are integrated into the APS to provide negative feedback. The proposed APS and pseudo 3-transistor APS were designed and fabricated using a $0.35-{\mu}m$ 2-poly 4-metal standard complementary metal oxide semiconductor (CMOS) process. Afterwards, their optical responses were measured and characterized. Although the proposed pixel size increased in comparison with the pseudo 3-transistor APS, the proposed pixel had a significantly extended dynamic range of 98 dB compared to a pseudo 3-transistor APS, which had a dynamic range of 28 dB. We present a proposed pixel that can be switched between two operating modes depending on the transfer gate voltage. The proposed pixel can be switched between two operating modes depending on the transfer gate voltage: normal mode and WDR mode. We also present an imaging system using the proposed APS.

Keywords

References

  1. E. Fossum, "CMOS image sensors: electronic cameraon- a-chip", IEEE Transactions on Electron Devices, Vol. 44, No. 10, pp. 1689-1698, 1997. https://doi.org/10.1109/16.628824
  2. M. Bigas, E. Cabruja, J. Forest, and J. Salvi, "Review of CMOS image sensors", Microelectronics Journal, Vol. 37, No. 5, pp. 433-451, 2006. https://doi.org/10.1016/j.mejo.2005.07.002
  3. Y. Egawa, N. Tanaka, N. Kawai, H. Seki, A. Nakao, H. Honda, Y. Lida, and M. Monoi, "A white-RGB CFApatterned CMOS image sensor with wide dynamic range", IEEE ISSCC Dig. Tech., pp. 52-53, San Francisco, USA, 2008.
  4. S. Sugawa, N. Akahane, S. Adachi, K. Mori, T. Ishiuchi, and K. Mizobuchi, "A 100 dB dynamic range CMOS image sensor using a lateral overflow integration capacitor", IEEE ISSCC Dig. Tech., pp. 352-353, San Francisco, USA, 2005.
  5. M. Ikebe and K. Saito, "A wide-dynamic-range compression image sensor with negative-feedback resetting", IEEE Sensors Journal, Vol. 7, No. 5, pp. 897-904, 2007. https://doi.org/10.1109/JSEN.2007.894897
  6. G.G. Storm, J.E.D Hurwitz, D. Renshaw, K. M. Findlater, R. K. Henderson, and M. D. Purcell, "Combined linear-logarithmic CMOS image sensor", IEEE ISSCC Dig. Tech., pp. 112-116, San Francisco, USA, 2004.
  7. T. Yamada, S. Kasuga, T. Murata, and Y. Kato, "A 140 dB-dynamic-range MOS image sensor with In-pixel multiple-exposure synthesis", IEEE ISSCC Dig. Tech., pp. 50-51, San Francisco, USA, 2008.
  8. N. Akahane, R. Ryuzaki, S. Adachi, K. Mizobuchi, and S. Sugawa, "A 200 dB dynamic range iris-less CMOS image sensor with lateral overflow integration capacitor using hybrid voltage and current readout operation", IEEE ISSCC Dig. Tech., pp. 1161-1170, San Francisco, USA, 2006.
  9. D.X.D. Yang, A. E. Gamal, B. Fowler, and H. Tian, "A 640 ${\times}$ 512 CMOS image sensor with ultrawide dynamic range floating-point pixel-level ADC", IEEE Journal of Solid-State Circuits, Vol. 34, No. 12, pp. 1821-1834, 1999. https://doi.org/10.1109/4.808907
  10. Y. Oike, A. Toda, T. Taura, A. Kato, H. Sato, M. Kasai, and N. Tadakuni , "A 121.8 dB dynamic range CMOS image sensor using pixel-variation-free midpoint potential drive and overlapping multiple exposures", International Image Sensor Workshop, pp. 30-33, Maine, USA, 2007.
  11. M. Mase, S. Kawahito, M. Sasaki, and Y. Wakamori, "A wide dynamic range CMOS image sensor with multiple exposure-time signal outputs and 12-bit column-parallel cyclic A/D converters", IEEE ISSCC Dig. Tech., pp. 350-351, San Francisco, USA, 2005.
  12. M. Sasaki, M. Mase, S. Kawahito, and Y. Tadokoro, "A wide-dynamic-range CMOS image sensor based on multiple short exposure-time readout with multiple-resolution column-parallel ADC", IEEE Sensors Journal, Vol. 7, No. 1, pp. 151-158, 2007. https://doi.org/10.1109/JSEN.2006.888058
  13. X. Qi, X. Guo, and J.G. Harris, "A time-to-first spike CMOS image Sensor", IEEE Sensors Journal, Vol. 7, No. 8, pp. 1165-1175, 2007. https://doi.org/10.1109/JSEN.2007.900937
  14. S. U. Ay, "A hybrid CMOS APS pixel for widedynamic range imaging applications", IEEE International Symposium on Circuits and Systems, pp. 1682-1631, Washington, USA, 2008.
  15. H.-Y. Cheng, B. Choubey, and S. Collins, "An integrating wide dynamic-range image sensor with a logarithmic response", IEEE Transactions on Electron Devices, Vol. 56, No. 11, pp. 2423-2428, 2008.
  16. S.-H. Seo, S.-H. Lee, M.-Y. Do, J.-K. Shin, and P. Choi, "Highly and variably sensitive complementary metal oxide semiconductor active pixel sensor using P-channel metal oxide semiconductor field effect transistor-type photodetector with transfer gate", Japanese Journal of Applied Physics, Vol. 45, No. 4B, pp. 3470-3474, 2006. https://doi.org/10.1143/JJAP.45.3470
  17. S.-H. Seo, K.-D. Kim, M.-W. Seo, J.-S. Kong, J.-K. Shin, and P. Choi, "Optical characteristics of an Nwell/gate-tied PMOSFET-type photodetector with built-in transfer gate for CMOS image sensor", Sensor and Materials, Vol. 19, No. 7, pp. 435-444, 2007.
  18. S.-Y. Lee, S.-H. Seo, J.-S. Kong, S.-H. Jo, K.-H. Choi, P. Choi, and J.-K. Shin, "Dynamic range extension of the n-well/gate-tied PMOSFET-type photodetector with a built-in transfer gate", J. Sensor Sci. & Tech., Vol. 19, No. 4, pp. 328-335, 2010. https://doi.org/10.5369/JSST.2010.19.4.328

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