References
- P. Hansen, D. Hennings, and H. Schreinemacher, J. Am. Ceram. Soc. 81, 1369 (1998).
- H. Kishi, N. Kohzu, and J. Sugino, J. Eur. Ceram. Soc. 20, 1997 (2000). https://doi.org/10.1016/S0955-2219(00)00076-5
- S. P. Nam, S. G. Lee, S. G. Bae, and Y. H. Lee, J. Electr. Eng. Technol. 2, 98 (2007). https://doi.org/10.5370/JEET.2007.2.1.098
- S. Anwar, P. R. Sagdeo, and N. P. Lalla, Solid State Commun. 138, 331 (2006). https://doi.org/10.1016/j.ssc.2006.03.018
- B. J. Sung, E. W. Lee, and J. G. Lee, J. Electr. Eng. Technol. 3, 293 (2008). https://doi.org/10.5370/JEET.2008.3.3.293
- I. J. Cho, K. S. Yun, and H. J. Nam, J. Electr. Eng. Technol. 6, 119 (2011). https://doi.org/10.5370/JEET.2011.6.1.119
- M. Matsubara, T. Yamaguchi, K. Kikuta, and S. Hirano, Jpn. J. Appl. Phys. 43, 7159 (2004). https://doi.org/10.1143/JJAP.43.7159
- W. K. Jeung, S. M. Choi, and Y. J. Kim, J. Electr. Eng. Technol. 1, 263 (2006). https://doi.org/10.5370/JEET.2006.1.2.263
- S. J. Zhang, R. Xia, T. R. Shrout, G. Z. Zang, and J. F. Wang, J. Appl. Phys. 100, 104108 (2006). https://doi.org/10.1063/1.2382348
- H. J. Bae, J. Koo, and J. P. Hong, J. Electr. Eng. Technol. 1, 120 (2006). https://doi.org/10.5370/JEET.2006.1.1.120
- G. L. Yuan and S. W. Or, Appl. Phys. Lett. 88, 062905 (2006). https://doi.org/10.1063/1.2169905
- M. S. Kim, Y. M. Jeon, Y. M. Im, Y. H. Lee, and T. H. Nam, Trans. Electr. Electron. Mater. 12, 20 (2011). https://doi.org/10.4313/TEEM.2011.12.1.20
- S. H. Lee, J. Electr. Eng. Technol. 2, 102 (2007). https://doi.org/10.5370/JEET.2007.2.1.102
- H.-J. Noh, S. G. Lee, and S. P. Nam, J. Electr. Eng. Technol. 4, 527 (2009). https://doi.org/10.5370/JEET.2009.4.4.527
- V. V. Thang, I. S. Kim, S. J. Jeong, M. S. Kim, and J. S. Song, J. Electr. Eng. Technol. 6, 671 (2011). https://doi.org/10.5370/JEET.2011.6.5.671
- K. S. Chang, S. M. Kang, K. G. Park, S. H. Shin, H. S. Kim, and H. S. Kim, J. Electr. Eng. Technol. 7, 75 (2012). https://doi.org/10.5370/JEET.2012.7.1.75
- K. A. Fonteyn, A. Belahcen, P. Rasilo, R. Kouhia, and A. Arkkio, J. Electr. Eng. Technol. 7, 336 (2012). https://doi.org/10.5370/JEET.2012.7.3.336
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