Transactions on Electrical and Electronic Materials

The Korean Institute of Electrical and Electronic Material Engineers (한국전기전자재료학회)
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Anomalous Stress-Induced Hump Effects in Amorphous Indium Gallium Zinc Oxide TFTs

  • Kim, Yu-Mi (Department of Electronics Engineering, Chungnam National University) ;
  • Jeong, Kwang-Seok (Department of Electronics Engineering, Chungnam National University) ;
  • Yun, Ho-Jin (Department of Electronics Engineering, Chungnam National University) ;
  • Yang, Seung-Dong (Department of Electronics Engineering, Chungnam National University) ;
  • Lee, Sang-Youl (Department of Electronics Engineering, Chungnam National University) ;
  • Lee, Hi-Deok (Department of Electronics Engineering, Chungnam National University) ;
  • Lee, Ga-Won (Department of Electronics Engineering, Chungnam National University)
  • Received : 2011.11.29
  • Accepted : 2012.01.21
  • Published : 2012.02.25
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Abstract

In this paper, we investigated the anomalous hump in the bottom gate staggered a-IGZO TFTs. During the positive bias stress, a positive threshold voltage shift was observed in the transfer curve and an anomalous hump occurred as the stress time increased. The hump became more serious in higher gate bias stress while it was not observed under the negative bias stress. The analysis of constant gate bias stress indicated that the anomalous hump was influenced by the migration of positively charged mobile interstitial zinc ion towards the top side of the a-IGZO channel layer.

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References

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