Journal of the Korean Institute of Electrical and Electronic Material Engineers (한국전기전자재료학회논문지)

The Korean Institute of Electrical and Electronic Material Engineers (한국전기전자재료학회)
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A Study on 600 V Super Junction Power MOSFET Optimization and Characterization Using the Deep Trench Filling

Deep Trench Filling 기술을 적용한 600 V급 Super Junction Power MOSFET의 최적화 특성에 관한 연구

  • Lee, Jung-Hoon (Department of Photovoltaic Engineering, Far East University) ;
  • Jung, Eun-Sik (Maple Semiconductor, Incorporated) ;
  • Kang, Ey-Goo (Department of Photovoltaic Engineering, Far East University)
  • Received : 2012.03.20
  • Accepted : 2012.03.24
  • Published : 2012.04.01
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Abstract

Power MOSFET(metal oxide silicon field effect transistor) operate voltage-driven devices, design to control the large power switching device for power supply, converter, motor control, etc. But on-resistance characteristics depending on the increasing breakdown voltage spikes is a problem. So 600 V planar power MOSFET compare to 1/3 low on-resistance characteristics of super junction MOSFET structure. In this paper design to 600 V planar MOSFET and super junction MOSFET, then improvement of comparative analysis breakdown voltage and resistance characteristics. As a result, super junction MOSFET improve on about 40% on-state voltage drop performance than planar MOSFET.

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References

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