Journal of the Korean Physical Society

Korean Physical Society (한국물리학회)
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Effect of Silicon-nanoparticle Addition on the Nanostructure of Polythiophene: Fullurene Bulk Heterojunction Solar Cells

  • Kim, Joonhyeon (Organic Nanoelectronics Laboratory, Department of Chemical Engineering, Kyungpook National University) ;
  • Nam, Sungho (Organic Nanoelectronics Laboratory, Department of Chemical Engineering, Kyungpook National University) ;
  • Jeong, Jaehoon (Organic Nanoelectronics Laboratory, Department of Chemical Engineering, Kyungpook National University) ;
  • Kim, Hwajeong (Organic Nanoelectronics Laboratory, Department of Chemical Engineering, Kyungpook National University) ;
  • Kim, Youngkyoo (Organic Nanoelectronics Laboratory, Department of Chemical Engineering, Kyungpook National University)
  • Published : 2012.07.31
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Abstract

We investigated the nanostructure change in bulk heterojunction films of poly(3-hexylthiophene) (P3HT) and 1-(3-methoxycarbonyl)-propyl-1-phenyl-(6,6)$C_{61}$ (PCBM) before and after adding silicon nanoparticles (SiNP) by employing synchrotron radiation grazing incidence-angle X-ray diffraction (GIXD) techniques. The GIXD results showed a gradual reduction of the P3HT (100) diffraction intensity in the out-of-plane (OOP) direction as the SiNP content was increased. Interestingly, a (100) intensity in the in-plane (IP) direction newly appeared when a small amount of SiNP was added, but it faded at higher SiNP contents. In particular, the addition of 2 wt.% SiNP increased the (100) intensity in both the OOP and the IP directions, leading to improved solar cell performance due to enhanced charge transport in the P3HT domains.

Keywords

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