Journal of the Korean Institute of Electrical and Electronic Material Engineers (한국전기전자재료학회논문지)

The Korean Institute of Electrical and Electronic Material Engineers (한국전기전자재료학회)
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Influence of Magnetic Field Near the Substrate on Characteristics of ITO Film Deposited by RF Sputtering Method

기판 부근의 자기장이 RF 스퍼터링법으로 증착된 ITO 박막의 특성에 미치는 영향

  • Kim, Hyun-Soo (Department of Electronics and Information Engineering, Soonchunhyang University) ;
  • Jang, Ho-Won (Korea Institute of Science and Technology, Electronic Materials Center) ;
  • Kang, Jong-Yoon (Korea Institute of Science and Technology, Electronic Materials Center) ;
  • Kim, Jin-Sang (Korea Institute of Science and Technology, Electronic Materials Center) ;
  • Yoon, Suk-Jin (Korea Institute of Science and Technology, Electronic Materials Center) ;
  • Kim, Chang-Kyo (Department of Electronics and Information Engineering, Soonchunhyang University)
  • 김현수 (순천향대학교 전자정보공학과) ;
  • 장호원 (한국과학기술연구원 전자재료센터) ;
  • 강종윤 (한국과학기술연구원 전자재료센터) ;
  • 김진상 (한국과학기술연구원 전자재료센터) ;
  • 윤석진 (한국과학기술연구원 전자재료센터) ;
  • 김창교 (순천향대학교 전자정보공학과)
  • Received : 2012.06.15
  • Accepted : 2012.06.24
  • Published : 2012.07.01
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Abstract

Indium tin oxide (ITO) films were prepared using radio frequency (RF) magnetron sputtering method, magnets were equipped near the target in the sputter to bring the plasma near the target. The effect of magnetic field that brings the plasma near the substrate was compared with that of substrate heating. The effect of substrate heating on the grain size of the ITO thin film was larger than that of the magnetic field. However, the grain size of the ITO thin film was larger when the magnetic field was applied near the substrate during the sputtering process than when the substrate was not heated and the magnetic field was not applied. If stronger magnetic field is applied near the substrate during sputtering, it can be expected that the ITO thin film with good electrical conductivity and high transparency is obtained at low substrate temperature. When magnetic field of 90 Gauss was applied near the substrate during sputtering, the mobility of the ITO thin film increased from 15.2 $cm^2/V.s$ to 23.3 $cm^2/V.s$, whereas the sheet resistivity decreased from 7.68 ${\Omega}{\cdot}cm$ to 5.11 ${\Omega}{\cdot}cm$.

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