Current Applied Physics

Korean Physical Society (한국물리학회)
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Effect of Er doping on optical band gap energy of $TiO_2$ thin films prepared by spin coating

  • Lee, Deuk Yong (Department of Materials Engineering, Daelim University) ;
  • Kim, Jin-Tae (Department of Materials Engineering, Daelim University) ;
  • Park, Ju-Hyun (Department of Materials Engineering, Daelim University) ;
  • Kim, Young-Hun (Department of Materials Engineering, Korea Aerospace University) ;
  • Lee, In-Kyu (Department of Materials Engineering, Korea Aerospace University) ;
  • Lee, Myung-Hyun (Green Ceramics Division, Korea Institute of Ceramic and Engineering) ;
  • Kim, Bae-Yeon (Department of Materials Science and Engineering, University of Incheon)
  • Published : 2013.09.30
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Abstract

In order to evaluate the effect of Er doping in the range of 0-1.0 mol% on optical indirect band gap energy ($E_g$) of the film, the Er-doped $TiO_2$ ($Er-TiO_2$) thin films were spin-coated onto fluorine-doped $SnO_2$ coated (FTO) glasses. Glancing angle X-ray diffraction (GAXRD) results indicated that the films whose thickness was 550 nm consisted of pure anatase and FTO substrate. The anatase (101) $TiO_2$ peaks became broader and weaker with the rise in Er content. The apparent crystallite size decreased from 12 nm to 10 nm with increasing the amount of Er from 0 mol% to 1.0 mol%. UV-vis spectrophotometry showed that the values of $E_g$ decreased from 3.25 eV to 2.81 eV with the increase of Er doping from 0 to 0.7 mol%, but changed to 2.89 eV when Er content was 1.0 mol%. The reduction in $E_g$ might be attributed to electron and/or hole trapping at the donor and acceptor levels in the $TiO_2$ band structure.

Keywords

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