Journal of the Korean Physical Society

Korean Physical Society (한국물리학회)
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Transparent Conductive Gallium-doped Indium Oxide Nanowires for Optoelectronic Applications

  • Mohamed, S.H. (Physics Department, College of Science, Qassim University, Saudi Arabia and Physics Department, Faculty of Science, Sohag University)
  • Received : 2012.12.03
  • Accepted : 2013.02.18
  • Published : 2013.03.31
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Abstract

Undoped and Ga-doped $In_2O_3$ nanowires (NWs) were synthesized by using vapor-liquid-solid (VLS) growth and were characterized as transparent conductive oxides for future generations of optoelectronic devices. A low amount of Ga was obtained due to the low solubility of $Ga_2O_3$ in $In_2O_3$. The incorporation of Ga into $In_2O_3$ nanowires decreases the grain size, the transmittance and the optical band gap. The Ga-doped $In_2O_3$ NWs exhibited a low sheet resistance of $12.2{\pm}2{\Omega}/{\Box}$ and a mean transmittance value in the visible region of 77.1, which favor its use as a promising transparent conductive oxide.

Keywords

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