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Transport Properties of $MgB_2$ Films Grown on Hastelloy Tape: Substrate Temperature Effect

  • Published : 2013.01.31

Abstract

We report on the transport properties of $MgB_2$ films that were directly grown on Hastelloy tapes by using a hybrid physical chemical deposition method. The substrate temperatures was varied from $480^{\circ}C$ to $540^{\circ}C$ in $20^{\circ}C$ increment while the deposition time and the gas mixing ratio were kept constant at 10 min and $H_2:B_2H_6=70:30$, respectively. Within this window of substrate temperature, all the samples except the one grown at $480^{\circ}C$ exhibited critical current densities, $J_c$, much higher than those observed in $MgB_2$ wires and tapes that were made by using the powder method. For instance, the film grown at $500^{\circ}C$ exhibited a value of $J_c$ exceeding $3{\times}10^5A/cm^2$ at 4 T and 5 K measured in magnetic fields applied perpendicular to the substrate. In the samples grown at temperatures above $500^{\circ}C$, a resistance dip was observed in the same field orientation, which can be regarded as evidence for strong flux pinning.

Keywords

References

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