Journal of the Optical Society of Korea

Optical Society of Korea (한국광학회)
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3D Measurement of TSVs Using Low Numerical Aperture White-Light Scanning Interferometry

  • Jo, Taeyong (School of Mechanical and Aerospace Engineering, Seoul National University) ;
  • Kim, Seongryong (School of Mechanical and Aerospace Engineering, Seoul National University) ;
  • Pahk, Heuijae (School of Mechanical and Aerospace Engineering, Seoul National University)
  • Received : 2013.06.03
  • Accepted : 2013.06.27
  • Published : 2013.08.25
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Abstract

We have proposed and demonstrated a low numerical aperture technique to measure the depth of through silicon vias (TSVs) using white-light scanning interferometry. The high aspect ratio hole like TSV's was considered to be impossible to measure using conventional optical methods due to low visibility at the bottom of the hole. We assumed that the limitation of the measurement was caused by reflection attenuation in TSVs. A novel interference theory which takes the structural reflection attenuation into consideration was proposed and simulated. As a result, we figured out that the low visibility in the interference signal was caused by the unbalanced light intensity between the object and the reference mirror. Unbalanced light can be balanced using an aperture at the illumination optics. As a result of simulation and experiment, we figured out that the interference signal can be enhanced using the proposed technique. With the proposed optics, the depth of TSVs having an aspect ratio of 11.2 was measured in 5 seconds. The proposed method is expected to be an alternative method for 3-D inspection of TSVs.

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References

  1. P. R. Morrow, C.-M. Park, S. Ramanathan, M. J. Kobrinsky, and M. Harmes, "Three-dimensional wafer stacking via Cu-Cu bonding integrated with 65 nm strained-Si/low-k CMOS technology," IEEE Electron Device Lett. 27, 335-337 (2006). https://doi.org/10.1109/LED.2006.873424
  2. M. Born and E. Wolf, "Elements of the theory of diffraction," in Principles of Optics (Cambridge University Press, Cambridge, UK, 2006).
  3. S. Kühne and C. Hierold, "Wafer-level packaging and direct interconnection technology based on hybrid bonding and through silicon vias," J. Micromech. Microeng. 21, 085032 (2011). https://doi.org/10.1088/0960-1317/21/8/085032
  4. D. Marx, D. Grant, R. Dudley, A. Rudack, and W. H. Teh, "Wafer Thickness Sensor (WTS) for etched depth measurement of TSV," in Proc. IWLPC-International Wafer-level Packaging Conference (San Francisco, CA, USA, 2009), pp. 1-5.
  5. S. Halder, A. Jourdain, M. Claes, I. De Wolf, Y. Travaly, E. Beyne, B. Swinnen, V. Pepper, P.-Y. Guittet, G. Savage, and L. Markwort, "Metrology and inspection for process control during bonding and thinning of stacked wafers for manufacturing 3D SIC's," in Proc. Electronic Components and Technology Conference (Lake Buena Vista, FL, USA, 2011), pp. 999-1002.
  6. C. Song, Z. Wang, and L. Liu, "Bottom-up copper electroplating using transfer wafers for fabrication of high aspectratio through-silicon-vias," Microelectron. Eng. 87, 510-513 (2010). https://doi.org/10.1016/j.mee.2009.06.029
  7. T. van Kessel and H. K. Wickramasinghe, "Measurement of trench depth by infrared interferometry," Opt. Lett. 24, 1702-1704 (1999). https://doi.org/10.1364/OL.24.001702
  8. C. A. Duran, A. A. Maznev, G. T. Merklin, A. Mazurenko, and M. Gostein, "Infrared reflectometry for metrology of trenches in power devices," in Proc. IEEE/SEMI Advanced Semiconductor Manufacturing Conference (Stresa, Italy, 2007), p. 175.
  9. J.-J. Tang, Y.-J. Lay, L.-S. Chen, and L.-Y. Lin, "TSV/3DIC profile metrology based on infrared microscope image," ECS Trans. 34, 937-942 (2011).
  10. Y. Fujimori, T. Tsuto, Y. Kudo, T. Inoue, and K. Okamoto, "A new methodology for TSV array inspection," Proc. SPIE 7971, 79710I (2011).
  11. J. Jin, J. W. Kim, C.-S. Kang, J.-A. Kim, and S. Lee, "Precision depth measurement of through silicon vias (TSVs) on 3D semiconductor packaging process," Opt. Express 20, 5011-5016 (2012). https://doi.org/10.1364/OE.20.005011
  12. K.-N. Joo and S.-W. Kim, "Theoretical considerations on combined optical distance measurements using a femtosecond pulse laser," J. Opt. Soc. Korea 16, 396-400 (2012). https://doi.org/10.3807/JOSK.2012.16.4.396
  13. M. Horie, S. Shiota, and S. Yamaguchi, "UV-reflectometry for fast trench-depth measurement," Proc. SPIE 6922, 69223D (2008).
  14. Y.-S. Ku, K. C. Huang, and W. Hsu, "Characterization of high density through silicon vias with spectral reflectometry," Opt. Express 19, 5993-6006 (2011). https://doi.org/10.1364/OE.19.005993
  15. H. G. Tompkins and W. A. McGahan, Spectroscopic Ellipsometry and Reflectometry: A User's Guide (Wiley, New York, USA, 1999).

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