Journal of Satellite, Information and Communications (한국위성정보통신학회논문지)

Korea Society of Satellite Technology (한국위성정보통신학회)
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Improvement of ESD (Electrostatic Discharge) Protection Performance of NEDSCR (N-Type Extended Drain Silicon Controlled Rectifier) Device using CPS (Counter Pocket Source) Ion Implantation

CPS 이온주입을 통한 NEDSCR 소자의 정전기 보호 성능 개선

  • 양준원 (세한대학교 컴퓨터교육과) ;
  • 서용진 (세한대학교 나노정보소재연구소)
  • Received : 2013.02.18
  • Accepted : 2013.03.04
  • Published : 2013.03.30
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Abstract

An electrostatic discharge (ESD) protection device, so called, N-type extended drain silicon controlled rectifier (NEDSCR) device, was analyzed for high voltage I/O applications. A conventional NEDSCR device shows typical SCR-like characteristics with extremely low snapback holding voltage. This may cause latch-up problem during normal operation. However, a modified NEDSCR device with proper junction/channel engineering using counter pocket source (CPS) ion implantation demonstrates itself with both the excellent ESD protection performance and the high latch-up immunity. Since the CPS implant technique does not change avalanche breakdown voltage, this methodology does not reduce available operation voltage and is applicable regardless of the operation voltage.

기존의 NEDSCR 소자는 매우 낮은 스냅백 홀딩전압과 낮은 온-저항을 가져 정상적인 동작 동안 래치업을 초래하므로 ESD 보호소자로 사용하는데 어려움이 있었다. 본 연구에서는 NEDSCR 소자의 시뮬레이션 및 TLP 테스트를 통해 이러한 단점들을 극복할 수 있는 새로운 방법을 제안하였다. 매우 우수한 ESD 보호 성능과 높은 래치업 면역 특성을 구현하기 위해 N+ 소오스 확산영역을 둘러싸는 P형의 CPS 이온주입공정을 추가함으로써 NEDSCR 소자의 스냅백 홀딩전압과 온 저항을 증가시켜 정전기 보호 성능을 개선시킬 수 있는 것으로 입증되었다.

Keywords

References

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