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Nonvolatile Ferroelectric P(VDF-TrFE) Memory Transistors Based on Inkjet-Printed Organic Semiconductor

  • Jung, Soon-Won (Components & Materials Research Laboratory, ETRI) ;
  • Na, Bock Soon (Components & Materials Research Laboratory, ETRI) ;
  • Baeg, Kang-Jun (Nano Carbon Materials Research Group, Korea Electrotechnology Research Institute) ;
  • Kim, Minseok (Components & Materials Research Laboratory, ETRI, School of Electrical Engineering, Korea University) ;
  • Yoon, Sung-Min (Department of Advanced Materials Engineering for Information and Electronics, Kyung Hee University) ;
  • Kim, Juhwan (Heeger Center for Advanced Materials, Gwangju Institute of Science and Technology) ;
  • Kim, Dong-Yu (Heeger Center for Advanced Materials, Gwangju Institute of Science and Technology) ;
  • You, In-Kyu (Components & Materials Research Laboratory, ETRI)
  • Received : 2012.06.26
  • Accepted : 2013.05.02
  • Published : 2013.08.01

Abstract

Nonvolatile ferroelectric poly(vinylidene fluoride-co-trifluoroethylene) memory based on an organic thin-film transistor with inkjet-printed dodecyl-substituted thienylenevinylene-thiophene copolymer (PC12TV12T) as the active layer is developed. The memory window is 4.5 V with a gate voltage sweep of -12.5 V to 12.5 V. The field effect mobility, on/off ratio, and gate leakage current are 0.1 $cm^2/Vs$, $10^5$, and $10^{-10}$ A, respectively. Although the retention behaviors should be improved and optimized, the obtained characteristics are very promising for future flexible electronics.

Keywords

References

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