Journal of the Korean Crystal Growth and Crystal Technology (한국결정성장학회지)

The Korea Association of Crystal Growth (한국결정성장학회)
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Synthesis of high purity aluminum nitride nanopowder by RF induction thermal plasma

유도결합 열 플라즈마를 이용한 고순도 질화알루미늄 나노 분말 합성

  • Kim, Kyung-In (Icheon Branch, Korea Institute of Ceramic Engineering and Technology) ;
  • Choi, Sung-Churl (Department of Advanced Materials Science and Engineering, Hanyang University) ;
  • Han, Kyu-Sung (Icheon Branch, Korea Institute of Ceramic Engineering and Technology) ;
  • Hwang, Kwang-Taek (Icheon Branch, Korea Institute of Ceramic Engineering and Technology) ;
  • Kim, Jin-Ho (Icheon Branch, Korea Institute of Ceramic Engineering and Technology)
  • 김경인 (한국세라믹기술원 이천분원) ;
  • 최성철 (한양대학교 신소재공학부) ;
  • 한규성 (한국세라믹기술원 이천분원) ;
  • 황광택 (한국세라믹기술원 이천분원) ;
  • 김진호 (한국세라믹기술원 이천분원)
  • Received : 2013.10.16
  • Accepted : 2013.12.06
  • Published : 2014.02.28
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Abstract

Aluminum nitride, which has outstanding properties such as high thermal conductivity and electrical resistivity, has been received a great attention as a substrate and packaging material of semiconductor devices. Since aluminum nitride has a high sintering temperature of 2173 K and its properties depends on the impurity level, it is necessary to synthesize high-purity and nano-sized aluminum nitride powders for the applications. In this research, we synthesized high purity aluminum nitride nanopowders from aluminum using RF induction thermal plasma system. Sheath gas (NH3) flow was controlled to establish the synthesis condition of high purity aluminum nitride nanopowders. The obtained aluminum nitride nanopowders were evaluated by XRD, SEM, TEM, BET, FTIR and N-O analysis.

질화알루미늄(AlN)은 뛰어난 열적, 전기절연성 특성을 갖고 있어 반도체 기판용 재료나 전자 패키징 재료로 주목받고 있다. 질화알루미늄은 소결온도가 높고 불순물로 인한 물성저하 때문에 고순도화 및 나노원료화가 필수적이다. 본 연구에서는 RF 유도결합 열플라즈마를 이용하여 알루미늄 분말로부터 고순도의 질화알루미늄 나노분말을 합성하였다. Sheath gas로 사용된 암모니아의 유량 제어를 통해 고순도의 질화알루미늄 나노분말이 합성되는 조건을 확립하고자 하였으며 합성된 분말은 XRD, SEM, TEM, BET, FTIR, N-O분석을 통해 특성분석을 진행하였다.

Keywords

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